SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.

Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate

A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been produced.Using the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.

Nanoscale strained-Si MOSFET physics and modeling approaches:a review

An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

A model to determine soiling,shading and thermal losses from PV yield data

Apart from being a clean source of energy,photovoltaic(PV)power plants are also a source of income generation for its investors and lenders.Therefore,mitigation of system losses is crucial for economic operation of PV plants.Combined losses due to soiling,shading and temperature in PV plants go as high as 50%.Much of these losses are unaccounted initially,which can jeopardize the economic viability of PV projects.This paper aims to provide a model to determine losses due to soiling,shading and temperature using quantities like irradiance,cell temperature,DC power and current,which are readily available in PV yield data captured by the remote monitoring system,without involving any additional sensors or equipment.In this study,soiling,shading and thermal losses were calculated using PV yield data obtained from a 30-kWp PV plant located in Kharagpur,India.The results showed soiling and shading losses as high as 25.7%and 9.7%,respectively,in the month of December.Soiling loss was verified by measuring transmittance loss of coupon glasses installed in the vicinity of the plant.Shading loss was verified by shadow simulation using an architectural tool(SketchUp).Array thermal loss obtained using the proposed methodology was found to be in line with the estimated value obtained from PVsyst simulation.Additionally,using time-series data,the energy losses corresponding to soiling,shading and temperature effects were calculated by a numerical-integration technique.The monetary loss due to these energy losses thus obtained provides criteria for deciding when to mitigate the sources of these losses.