We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have bee...We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447 A/cm^(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm.Moreover,the lasing redshifts from 1.61μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.展开更多
We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventiona...We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.展开更多
We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as ...We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises.To realize this,we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480nm,whose reflectivity increases as the emission wavelength of the lasers red-shifts.Consequently,the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10℃to 70℃,compared with the traditional one with a temperature-independent mirror loss.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61176047,61076050,61204057 and 61204076the National Basic Research Program of China under Grant No 2012CB932701.
文摘We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447 A/cm^(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm.Moreover,the lasing redshifts from 1.61μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.
基金Supported by the One-Hundred Talents Program of Chinese Academy of Sciences,and the National Science Foundation of China under Grant Nos 60876033,61076050 and 61021003.
文摘We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
基金Supported by the One-Hundred Talents Program of Chinese Academy of Sciences and the National Natural Science Foundation of China under Grant Nos 60876033,61076050 and 61021003.
文摘We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises.To realize this,we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480nm,whose reflectivity increases as the emission wavelength of the lasers red-shifts.Consequently,the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10℃to 70℃,compared with the traditional one with a temperature-independent mirror loss.
