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HfO_(2)铁电薄膜基MFIS存储结构中的高κ介电晶籽层效应研究:铁电正交相生长和界面电荷注入抑制 被引量:1
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作者 张岩 王岛 +10 位作者 王佳丽 罗春来 李明 李育珊 陶瑞强 陈德扬 樊贞 戴吉岩 周国富 陆旭兵 刘俊明 《Science China Materials》 SCIE EI CAS CSCD 2023年第1期219-232,共14页
HfO_(2)基材料铁电场效应晶体管(FeFET)商业化应用面临的一个重要挑战是其疲劳特性差.本文提出,在基于金属-铁电-绝缘层-半导体(MFIS)栅叠层结构的FeFET中研发合适的高κ界面晶籽层(SL)以大幅度提升其疲劳性能.我们在ZrO_(2),HfO_(2),(H... HfO_(2)基材料铁电场效应晶体管(FeFET)商业化应用面临的一个重要挑战是其疲劳特性差.本文提出,在基于金属-铁电-绝缘层-半导体(MFIS)栅叠层结构的FeFET中研发合适的高κ界面晶籽层(SL)以大幅度提升其疲劳性能.我们在ZrO_(2),HfO_(2),(HfO_(2))0.75(Al_(2)O_(3))0.25(HAO)和Al_(2)O_(3)等典型的高κ介电SL上制备了Hf_(0.5)Zr_(0.5)O_(2)(HZO)铁电薄膜,系统研究了HZO薄膜的微观结构、铁电性及其MFIS器件的存储特性.首先,揭示了HZO薄膜中铁电正交相的形核和生长不仅受高κ介电SL表面能的影响,而且其微观结构对HZO中正交相的形成也起到重要作用.其次,澄清了高κ介电晶籽层对MFIS结构存储特性的影响,通过精确计算的MFIS结构的界面层电场,对MFIS结构的存储特性做出了合理解释.最后,基于HAO的高κSL的MFIS器件实现了铁电极化和界面电荷注入之间的合理优化,并且获得了较大铁电存储窗口(>1.0 V),出色的保持特性(>1.6×104s)和疲劳特性(>105).本文为未来解决HfO_(2)基Fe FET的疲劳问题提供了有价值的思路,为在介电SL上生长HfO_(2)铁电薄膜的其他高性能电子器件的开发提供了参考. 展开更多
关键词 存储特性 存储结构 铁电薄膜 商业化应用 MFIS 铁电存储 疲劳特性 叠层结构
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具有大电导动态范围和多级电导态的铁电Hf_(0.5)Zr_(0.5)O_(2)栅控突触晶体管 被引量:1
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作者 罗春来 张岩 +11 位作者 帅文韬 贺可心 李明 陶瑞强 陈德扬 樊贞 张斌 周小元 戴吉岩 周国富 陆旭兵 刘俊明 《Science China Materials》 SCIE EI CAS CSCD 2023年第6期2372-2382,共11页
得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(G_(max)/G_(min))和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf_(0.5)Zr_(0.5)O_(2)(HZO... 得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(G_(max)/G_(min))和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf_(0.5)Zr_(0.5)O_(2)(HZO)栅介质结合溶液处理的氧化铟(In_(2)O_(3))突触晶体管以解决上述问题.通过精细调控的铁电相以及对铁电体和铁电/半导体界面的电荷注入良好抑制,实现了优异的突触特性.在每个尖峰事件490 fJ的低能耗下,该FST成功模拟了高达101个有效电导状态的长时程增强/抑制(LTP/D),且具有大电导动态范围(G_(max)/G_(min)=32.2)和优异耐久性(>1000个循环).此外,模拟实现了96.5%的手写数字识别准确率,这是现有报道的FST的最高记录.这项工作为开发低成本、高性能和节能的铁电突触晶体管提供了一条新途径. 展开更多
关键词 动态范围 半导体界面 电荷注入 栅介质 氧化铟 非易失性 铁电材料 电突触
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Enhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle deposition 被引量:1
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作者 Chun Hung Suen Dongliang Shi +9 位作者 Y.Su Zhi Zhang Cheuk Ho Chan Xiaodan Tang Y.Li Kwok Ho Lam Xinxin Chen B.L.Huang X.Y.Zhou ji-yan dai 《Journal of Materiomics》 SCIE EI 2017年第4期293-298,共6页
SnSe single crystals have been demonstrated to possess excellent thermoelectric properties.In this work,we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pu... SnSe single crystals have been demonstrated to possess excellent thermoelectric properties.In this work,we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pulsed-laser deposition approach.Structural characterization reveals that the SnSe film deposited at a normal angle has a preferred orientation along a axis,while by contrast,the SnSe film deposited at an 80glancing angle develops a nanopillar structure with the growth direction towards the incident atomic flux.The glancing angle deposition greatly reduces the grain size of the thin film due to a shadowing effect to the adatoms,resulting in significantly increased power factor for more than 100%.The maximum Seebeck coefficient and power factor are 498.5 mV=K and 18.5 mWcm^(-1)K^(-2),respectively.The enhancement of thermoelectric property can be attributed to the potential barrier scattering at grain boundaries owing to the reduced grain size and increased grain boundaries in the film.Given this enhanced power factor,and considering the fact that the nanopillar structure should have much lower thermal conductivity than a plain film,the zT value of such made SnSe film could be significantly larger than the corresponding single crystal film,making it a good candidate for thin film-based thermoelectric device. 展开更多
关键词 THERMOELECTRIC SnSe Glancing angle Potential barrier scattering
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High thermoelectric performance of ZrTe_(2)/SrTiO_(3) heterostructure
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作者 Chun Hung Suen Long Zhang +6 位作者 Kunya Yang M.Q.He Y.S.Chai K.Zhou Huichao Wang X.Y.Zhou ji-yan dai 《Journal of Materiomics》 SCIE 2022年第3期570-576,共7页
Achieving high thermoelectric pe rformance in thin fiIm heterostructures is essental for integrated and minlatured ther moelectric device applcations.In this work,we d emonstrate a mechansm and device performance of e... Achieving high thermoelectric pe rformance in thin fiIm heterostructures is essental for integrated and minlatured ther moelectric device applcations.In this work,we d emonstrate a mechansm and device performance of enh anced themoelectnic perfomance induced by interfuclal effect in a tansitdon metal dichalcogenides SrTiO_(3)(STO)heterpstructure Owing to the fomed conductive interface and elevated conductivity.the ZrTe_(2)/STO he teras tructure presents large thermoelectric power factor of 3.7×10^(5)μWcm^(-1)K^(-2) at 10 K.Fomat ion of quasi-wo dimensional conductance at the interface s atributed for the lage Seebeck coffcent and high electnical conductivity leading to high thermoelectric perfor mance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure This supenior themoelectnic property makes this he teros tructure a promtsing candidate for future thermoelectric device. 展开更多
关键词 THERMOELECTRIC ZrTe_(2)thin film High mobility INTERFACE Transition metal dichalcogenides
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ENHANCED MULTIFERROIC PROPERTIES OF La-DOPED BiFeO_(3)NANOTUBES FABRICATED THROUGH ANODIC ALUMINA TEMPLATE METHOD
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作者 ZHENG-LONG HU YAN WANG +4 位作者 ji-yan dai DI ZHOU YONG-MING HU HAO-SHUANG GU KARIM Z.BABA-KISHI 《Journal of Advanced Dielectrics》 CAS 2011年第3期325-330,共6页
Bi_(0.85)La_(0.15)FeO_(3)(BLFO)nanotubes with an average diameter of about 200 nm and wall thickness of about 20 nm are fabricated by solgel alumina template technique,and their room-temperature multiferroic properti... Bi_(0.85)La_(0.15)FeO_(3)(BLFO)nanotubes with an average diameter of about 200 nm and wall thickness of about 20 nm are fabricated by solgel alumina template technique,and their room-temperature multiferroic properties are studied.Piezoelectricity and ferroelectricity in the BLFO nanotubes are revealed by piezoresponse force microscopy study of individual nanotube.Doping the BiFeO_(3)nanotubes with La reduces the crystallization temperature and results in a reduced lose of Bi and therefore improved multiferroic properties of the nanotubes.Enhanced weak ferromagnetism is also observed,and it is attributed to the nano-crystalline structure of the nanotubes. 展开更多
关键词 Bi_(0.85)La_(0.15)FeO_(3) nanotube FERROELECTRICITY PIEZOELECTRICITY perovskite
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