The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic d...The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.展开更多
We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage.To avoid the crosstalk problem between adjacent memory cells,the ...We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage.To avoid the crosstalk problem between adjacent memory cells,the safe distance between adjacent elements of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin−film capacitors is estimated to be 0.156µm.Moreover,the fatigue of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.展开更多
Rh-doped barium titanate (BaTiO3) epitaxial thin films have been fabricated on SrTiO_(3) (100) substrates by pulsed laser deposition. The nonlinear optical properties of the films were determined using the z-scan meth...Rh-doped barium titanate (BaTiO3) epitaxial thin films have been fabricated on SrTiO_(3) (100) substrates by pulsed laser deposition. The nonlinear optical properties of the films were determined using the z-scan method at a wavelength of 532nm with a laser duration of 10hs. The real and imaginary parts of the third-order nonlinear susceptibility χ^((3)) were 5.71 × 10^(-7) esu and 9.59×10^(-8) esu, respectively. The real part value of x(3) of the Rh:BaTiO3 films is about one order larger than that of Ce-doped BaTiO3 thin films. The results show that Rh:BaTiO3 thin films have great potential applications for nonlinear optical devices.展开更多
基金Supported by Shanghai Key Program(1052nm07600)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
文摘The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.
基金by Shanghai Key Program(No 1052nm07600)the Program for Professors of Special Appointment(Eastern Scholar)at Shanghai.
文摘We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage.To avoid the crosstalk problem between adjacent memory cells,the safe distance between adjacent elements of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin−film capacitors is estimated to be 0.156µm.Moreover,the fatigue of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.
基金Supported by the National Natural Science Foundation of China under Grant No.5001161952。
文摘Rh-doped barium titanate (BaTiO3) epitaxial thin films have been fabricated on SrTiO_(3) (100) substrates by pulsed laser deposition. The nonlinear optical properties of the films were determined using the z-scan method at a wavelength of 532nm with a laser duration of 10hs. The real and imaginary parts of the third-order nonlinear susceptibility χ^((3)) were 5.71 × 10^(-7) esu and 9.59×10^(-8) esu, respectively. The real part value of x(3) of the Rh:BaTiO3 films is about one order larger than that of Ce-doped BaTiO3 thin films. The results show that Rh:BaTiO3 thin films have great potential applications for nonlinear optical devices.
