We report the ferroelectric,dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zro.52 Tio.48)O3,PZT) thick film containing micro- and nano-crystalline particles. The results ...We report the ferroelectric,dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zro.52 Tio.48)O3,PZT) thick film containing micro- and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films,the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700℃,and increases with the increasing film thickness.For the piezoelectric properties,the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4-μm-thick PZT film shows the largest value of about 200.65 pC/N.Therefore,the PZT thick films present good electric properties and enlarged potential in MEMS applications.展开更多
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2007AA03Z103the National Natural Science Foundation of China under Grant Nos 50742007 and 10974053the Key Laboratory Foundation of Sonar Technology of China under Grant No 9140C24KF0901。
文摘We report the ferroelectric,dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zro.52 Tio.48)O3,PZT) thick film containing micro- and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films,the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700℃,and increases with the increasing film thickness.For the piezoelectric properties,the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4-μm-thick PZT film shows the largest value of about 200.65 pC/N.Therefore,the PZT thick films present good electric properties and enlarged potential in MEMS applications.
