An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscil...An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected.Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers.An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300℃ as verified by the experiment.展开更多
A multilayer film(multi-film),consisting of alternate Er-Si-codoped Al_(2)O_(3)(ESA)and Si−doped Al_(2)O_(3)(SA)sublayers,is synthesized by co−sputtering from separated Er,Si,and Al2O3 targets.The dependence of Er^(3+...A multilayer film(multi-film),consisting of alternate Er-Si-codoped Al_(2)O_(3)(ESA)and Si−doped Al_(2)O_(3)(SA)sublayers,is synthesized by co−sputtering from separated Er,Si,and Al2O3 targets.The dependence of Er^(3+)related photoluminescence(PL)properties on annealing temperatures over 700–1100°C is studied.The maximum intensity of Er^(3+) photoluminance(PL),about 10 times higher than that of the monolayer film,is obtained from the multi−film annealed at 950°C.The enhancement of Er^(3+) PL intensity is attributed to the energy transfer from the silicon nanocrystals(Si−NCs)to the neighboring Er^(3+) ions.The effective characteristic interaction distance(or the critical ET length)between Er and carriers(Si−NCs)is∼3 nm.The PL intensity exhibits a nonmonotonic temperature dependence.Meanwhile,the PL integrated intensity at room temperature is about 30%higher than that at 14 K.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69476008the Key Project of the State Commission of Science and Technology of China.
文摘An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected.Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers.An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300℃ as verified by the experiment.
基金Supported by the National Natural Science Foundation of China under Grant No 50602029the Ministry of Science and Innovation of Spain(SB2005-003)+1 种基金the National Basic Research Program of China under Grant No 2011CB925601the Shanghai Municipal Education Commission,the Shanghai Science and Technology Commission,and the Shanghai Leading Academic Discipline Project(No S30105).
文摘A multilayer film(multi-film),consisting of alternate Er-Si-codoped Al_(2)O_(3)(ESA)and Si−doped Al_(2)O_(3)(SA)sublayers,is synthesized by co−sputtering from separated Er,Si,and Al2O3 targets.The dependence of Er^(3+)related photoluminescence(PL)properties on annealing temperatures over 700–1100°C is studied.The maximum intensity of Er^(3+) photoluminance(PL),about 10 times higher than that of the monolayer film,is obtained from the multi−film annealed at 950°C.The enhancement of Er^(3+) PL intensity is attributed to the energy transfer from the silicon nanocrystals(Si−NCs)to the neighboring Er^(3+) ions.The effective characteristic interaction distance(or the critical ET length)between Er and carriers(Si−NCs)is∼3 nm.The PL intensity exhibits a nonmonotonic temperature dependence.Meanwhile,the PL integrated intensity at room temperature is about 30%higher than that at 14 K.
