P-type GaN was grown on AI3O2 substrate by low pressure metalorganic vapor phase epitaxy without any post treatment.The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compen...P-type GaN was grown on AI3O2 substrate by low pressure metalorganic vapor phase epitaxy without any post treatment.The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compensation semiconductor,that is a hole concentration of 2.2× 10^(17)cm^(-3) at 77K,which changes to n-type with an electron concentration of 2.7 × 10^(17) cm^(-3) at room temperature.After thermal annealing under a N2 ambient,it showed the characteristics of a heavy-doped semiconductor and the hole concentration was enhanced reaching a hole concentrations of 4.2× 10^(17) at 77K and 5.7 × 10^(17) cm^(-3) at room temperature.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69476025.
文摘P-type GaN was grown on AI3O2 substrate by low pressure metalorganic vapor phase epitaxy without any post treatment.The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compensation semiconductor,that is a hole concentration of 2.2× 10^(17)cm^(-3) at 77K,which changes to n-type with an electron concentration of 2.7 × 10^(17) cm^(-3) at room temperature.After thermal annealing under a N2 ambient,it showed the characteristics of a heavy-doped semiconductor and the hole concentration was enhanced reaching a hole concentrations of 4.2× 10^(17) at 77K and 5.7 × 10^(17) cm^(-3) at room temperature.
