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Full-color micro-LED display with high color stability using semipolar(20-21) InGaN LEDs and quantum-dot photoresist 被引量:21
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作者 SUNG-WEN HUANG CHEN YU-MING HUANG +10 位作者 KONTHOUJAM JAMES SINGH YU-CHIEN HSU FANG-JYUN LIOU JIE SONG JOOWON CHOI PO-TSUNG LEE CHIEN-CHUNG LIN ZHONG CHEN jung han TINGZHU WU HAO-CHUNG KUO 《Photonics Research》 SCIE EI CSCD 2020年第5期630-636,共7页
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ... Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020). 展开更多
关键词 LEDS PHOTORESIST sapphire
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