The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rati...The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rational design of heterostructure electrocatalysts with abundant active sites and strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling of polysulfides in lithium-sulfur batteries.Herein,ultrathin nonlayered NiO/Ni_(3)S_(2)heterostructure nanosheets are developed through topochemical transformation of layered Ni(OH)_(2)templates to improve the utilization of sulfur and facilitate stable cycling of batteries.As a multifunction catalyst,NiO/Ni_(3)S_(2)not only enhances the adsorption of polysulfides and shorten the transport path of Li ions and electrons but also promotes the Li_(2)S formation and transformation,which are verified by both in-situ Raman spectroscopy and electrochemical investigations.Thus,the cell with NiO/Ni_(3)S_(2)as electrocatalyst delivers an area capacity of 4.8 mAh cm^(-2)under the high sulfur loading(6 mg cm^(-2))and low electrolyte/sulfur ratio(4.3 pL mg^(-1)).The strategy can be extended to 2D Ni foil,demonstrating its prospects in the construction of electrodes with high gravimetric/volumetric energy densities.The designed electrocatalyst of ultrathin nonlayered heterostructure will shed light on achieving high energy density lithium-sulfur batteries.展开更多
Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers...Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.展开更多
Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research i...Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research interest.The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle.Transmission electron microscopy(TEM)with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology,structures and chemical compositions at atomic scale.The various external stimuli,such as thermal,electrical,mechanical,optical and magnetic fields,provide a platform to probe and engineer NVM devices inside TEM in real-time.Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution.This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package.In this review,the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced,with intermetallic compounds forming and degradation process investigated.The principles and challenges of TEM technology on NVM device study are also discussed.展开更多
Screening and diagnosing of abnormal Leukocytes are crucial for the diagnosis of immune diseases and Acute Lymphoblastic Leukemia(ALL).As the deterioration of abnormal leukocytes is mainly due to the changes in the ch...Screening and diagnosing of abnormal Leukocytes are crucial for the diagnosis of immune diseases and Acute Lymphoblastic Leukemia(ALL).As the deterioration of abnormal leukocytes is mainly due to the changes in the chromatin distribution,which signicantly affects the absorption and reflection of light,the spectral feature is proved to be important for leukocytes classication and identication.This paper proposes an accurate identication method for healthy and abnormal leukocytes based on microscopic hyperspectral imaging(HSI)technology which combines the spectral information.The segmentation of nucleus and cytoplasm is obtained by the morphological watershed algorithm.Then,the spectral features are extracted and combined with the spatial features.Based on this,the support vector machine(SVM)is applied for classication ofve types of leukocytes and abnormal leukocytes.Compared with different classication methods,the proposed method utilizes spectral features which highlight the differences between healthy leukocytes and abnormal leukocytes,improving the accuracy in the classication and identication of leukocytes.This paper only selects one subtype of ALL for test,and the proposed method can be applied for detection of other leukemia in the future.展开更多
During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector p...During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications.展开更多
The beneficial effect of the alkali metals such as Na and K on the Cu（In.Ga）Se2 （CIGS） and Cu2ZnSn（S,Se）4 （CZTSSe） solar cells has been extensively investigated in the past two decades, however, in most of the...The beneficial effect of the alkali metals such as Na and K on the Cu（In.Ga）Se2 （CIGS） and Cu2ZnSn（S,Se）4 （CZTSSe） solar cells has been extensively investigated in the past two decades, however, in most of the studies the alkali metals were treated as dopants. Several recent studies have showed that the alkali metals may not only act as dopants but also form secondary phases in the absorber layer or on the surfaces of the films. Using the first-principles calculations, we screened out the most probable secondary phases of Na and K in CIGS and CZTSSe, and studied their electronic structures and optical properties. We found that all these alkali chalcogenide compounds have larger band gaps and lower VBM levels than CIGS and CZTSSe, because the existence of strong p-d coupling in CIS and CZTS pushes the valence band maximum （VBM） level up and reduces the band-gaps, while there is no such p-d coupling in these alkali chalcogenides. This band alignment repels the photo-generated holes from the secondary phases and prevents the electron-hole recombination. Moreover, the study on the optical properties of the secondary phases showed that the absorption coefficients of these alkali chalcogenides are much lower than those of CIGS and CZTSSe in the energy range of 0-3.4eV, which means that the alkali chalcogenides may not influence the absorption of solar light. Since the alkali metal dopants can passivate the grain boundaries and increase the hole carrier concentration, and meanwhile their related secondary phases have innocuous effect on the optical absorption and band alignment, we can understand why the alkali metal dopants can improve the CIGS and CZTSSe solar cell performance.展开更多
Advanced electronic materials are the fundamental building blocks of integrated circuits(ICs).The microscale properties of electronic materials(e.g.,crystal structures,defects,and chemical properties)can have a consid...Advanced electronic materials are the fundamental building blocks of integrated circuits(ICs).The microscale properties of electronic materials(e.g.,crystal structures,defects,and chemical properties)can have a considerable impact on the performance of ICs.Comprehensive characterization and analysis of the material in real time with high-spatial resolution are indispensable.In situ transmission electron microscope(TEM)with atomic resolution and external field can be applied as a physical simulation platform to study the evolution of electronic material in working conditions.The high-speed camera of the in situ TEM generates a high frame rate video,resulting in a large dataset that is beyond the data processing ability of researchers using the traditional method.To overcome this challenge,many works on automated TEM analysis by using machine-learning algorithm have been proposed.In this review,we introduce the technical evolution of TEM data acquisition,including analysis,and we summarize the application of machine learning to TEM data analysis in the aspects of morphology,defect,structure,and spectra.Some of the challenges of automated TEM analysis are given in the conclusion.展开更多
State number,operation power,dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy and low-power-consumption neuromorphic com-puting in hardware.However,hi...State number,operation power,dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy and low-power-consumption neuromorphic com-puting in hardware.However,high linearity and low power consump-tion couldn’t be simultaneously achieved by most of the reported synaptic devices,which limits the performance of the hardware.This work demonstrates van der Waals(vdW)stacked ferroelectric field-effect transistors(FeFET)with single-crystalline ferroelectric nanoflakes.Ferroelectrics are of fine vdW interface and partial polar-ization switching of multi-domains under electric field pulses,which makes the FeFETs exhibit multi-state memory characteristics and ex-cellent synaptic plasticity.They also exhibit a desired linear conduc-tance weight update with 128 conductance states,a sufficiently high dynamic range of G_(max)/G_(min)>120,and a low power consumption of 10 fJ/spike using identical pulses.Based on such an all-round device,a two-layer artificial neural network was built to conduct Modified Na-tional Institute of Standards and Technology(MNIST)digital num-bers and electrocardiogram(ECG)pattern-recognition simulations,with the high accuracies reaching 97.6%and 92.4%,respectively.The remarkable performance demonstrates that vdW-FeFET is of obvious advantages in high-precision neuromorphic computing applications.展开更多
The poor stability of halide perovskite nanocrystals(NCs)has severely hindered future practical application.Herein,we proposed a facile and effective ligand modification route to synthesize stable CsPbBr_(3) nanocryst...The poor stability of halide perovskite nanocrystals(NCs)has severely hindered future practical application.Herein,we proposed a facile and effective ligand modification route to synthesize stable CsPbBr_(3) nanocrystals by introducing a double-terminal ligand,namely 4,4'-Azobis(4-cyanovalericacid)(CA),to replace the conventional oleic acid(OA)ligand at room temperature.The as-synthesized CsPbBr_(3)-CA not only possesses high photoluminescence quantum yield(72%)related to the reduced trap defects,but also shows significantly improved stability exposure to water,ethanol,light,and/or heat benefiting from the CA ligand anchored to NC surfaces tightly.The photoluminescence intensity of CsPbBr_(3)-CA maintains about 80%and 75%of its initial emission intensity after immersed in water or ethanol for 360 min,respectively,whereas that of the CsPbBr_(3)-OA was quenched completely within a few minutes.Moreover,an all-inorganic white light-emitting diode(LED)covered 126%National Television System Committee(NTSC)standard and 92%Rec.2020 standard was fabricated by combining the green CsPbBr_(3)-CA and commercial red-emitting K2SiF6:Mn4+(KSF)phosphors onto a blue LED chip.Thus,the presented work initiates the development of the room temperature preparation of high quality CsPbBr_(3) and shows prospect for next-generation displays.展开更多
The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes...The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes it difficult for devices to stand out.Here,we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake.Vanadium dioxide is a classical semiconductor with a narrow bandgap,a high temperature coefficient of resistance,and phase transformation.Molybdenum ditelluride,a typical two-dimensional material,is often used to construct optoelectronic devices.The heterostructure can realize three different functional modes:(i)the p-n junction exhibits ultrasensitive detection(450 nm-2μm)with a dark current down to 0.2 pA and a response time of 17μs,(ii)the Schottky junction works stably under extreme conditions such as a high temperature of 400 K,and(iii)the bolometer shows ultrabroad spectrum detection exceeding 10μm.The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation(LWIR).This type of photodetector combines versatile detection modes,shedding light on the hybrid application of novel and traditional materials,and is a prototype of advanced optoelectronic devices.展开更多
Manganese oxides with a perovskite-type Re_(1-x)D_xMnO_3(Re:heavy rare-earth elements,D:divalent alkali metal)structure have attracted interest because of the complex interaction between their electrons,lattices,and s...Manganese oxides with a perovskite-type Re_(1-x)D_xMnO_3(Re:heavy rare-earth elements,D:divalent alkali metal)structure have attracted interest because of the complex interaction between their electrons,lattices,and spins[1-5].Generally,manganese oxides with the structure Re_(1-x)D_xMnO_3 have special properties.For example,the half-metallic manganites,such as La_(2/3)Sr_(1/3)MnO_3 and La_(2/3)Ca_(1/3)MnO_3,wherein the conduction electrons are completely spin polarized。展开更多
High-performance uncooled millimnetre and terahertz wave detectors are required as a building block for a wide range of applications.The state-of-the art technologies,however,are plagued by low sensitivity,narrow spec...High-performance uncooled millimnetre and terahertz wave detectors are required as a building block for a wide range of applications.The state-of-the art technologies,however,are plagued by low sensitivity,narrow spectral bandwidth,and complicated architecture.Here,we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation.By making a nanogroove array in the grown InSb layer,strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces,which results in significant improvement in detecting performance.A noise equivalent power(NEP)of 2.2× 10^(-14)WHz^(-1/2) or a detectivity(D)of 2.7× 10^(12)cmHz^(1/2) W^(-1) at 1.75 mm(0.171 THz)is achieved at room temperature.By lowering the temperature to the thermoelectric cooling available 200 K,the corresponding NEP and D'of the nanogroove device can be improved to 3.8× 10^(-15)WHz^(-1/2) and 1.6× 10^(13) cm Hz^(-1/2) w^(-1),respectively.In addition,such a single device can perform broad spectral band detection from 0.9 mm(0.330 THz)to 9.4 mm(0.032 THz).Fast responses of 3.5μs and 780 ns are achieved at room temperature and 200 K,respectively.Such high-performance millimnetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications,walk-through security,biological diagnosis,spectroscopy,and remote sensing.In addition,the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.展开更多
All-inorganic perovskite micro/nanolasers are emerging as a class of miniaturized coherent photonic sources for many potential applications,such as optical communication,computing,and imaging,owing to their ultracompa...All-inorganic perovskite micro/nanolasers are emerging as a class of miniaturized coherent photonic sources for many potential applications,such as optical communication,computing,and imaging,owing to their ultracompact sizes,highly localized coherent output,and broadband wavelength tunability.However,to achieve singlemode laser emission in the microscale perovskite cavity is still challenging.Herein,we report unprecedented single-mode laser operations at room temperature in self-assembly Cs Pb X3 microcavities over an ultrawide pumping wavelength range of 400–2300 nm,covering one-to five-photon absorption processes.The superior frequency down-and upconversion single-mode lasing manifests high multiphoton absorption efficiency and excellent optical gain from the electron–hole plasma state in the perovskite microcavities.Through direct compositional modulation,the wavelength of a single-mode Cs Pb X3 microlaser can be continuously tuned from blue-violet to green(427–543 nm).The laser emission remains stable and robust after long-term high-intensity excitation for over 12 h(up to 4.3×107 excitation cycles)in the ambient atmosphere.Moreover,the pump-wavelength dependence of the threshold,as well as the detailed lasing dynamics such as the gain-switching and electron–hole plasma mechanisms,are systematically investigated to shed insight into the more fundamental issues of the lasing processes in Cs Pb X3 perovskite microcavities.展开更多
Silicon-based light sources, including light-emitting diodes(LEDs) and laser diodes(LDs) for information transmission, are urgently needed for developing monolithic integrated silicon photonics. Silicon with erbium io...Silicon-based light sources, including light-emitting diodes(LEDs) and laser diodes(LDs) for information transmission, are urgently needed for developing monolithic integrated silicon photonics. Silicon with erbium ions(Er^(3+)) doped by ion implantation is considered a promising approach, but it suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 μm from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA(~0.8 A∕cm^(2)). Time-resolved photoluminescence and photocurrent results have revealed the complex carrier transfer dynamics by relaxing electrons from the Si conduction band to the Er^(3+) ion. This picture differs from the frequently assumed energy transfer via electron–hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves the way for fabricating superluminescent diodes or efficient LEDs at communication wavelengths based on rare-earth-doped silicon.展开更多
基金supported by the National Natural Science Foundation of China(Grant nos.62090013,61974043,and 91833303)the National Key R&D Program of China(Grant no.2019YFB2203403)+1 种基金the Projects of Science and Technology Commission of Shanghai Municipality(Grant nos.21JC1402100 and 19511120100)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
文摘The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rational design of heterostructure electrocatalysts with abundant active sites and strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling of polysulfides in lithium-sulfur batteries.Herein,ultrathin nonlayered NiO/Ni_(3)S_(2)heterostructure nanosheets are developed through topochemical transformation of layered Ni(OH)_(2)templates to improve the utilization of sulfur and facilitate stable cycling of batteries.As a multifunction catalyst,NiO/Ni_(3)S_(2)not only enhances the adsorption of polysulfides and shorten the transport path of Li ions and electrons but also promotes the Li_(2)S formation and transformation,which are verified by both in-situ Raman spectroscopy and electrochemical investigations.Thus,the cell with NiO/Ni_(3)S_(2)as electrocatalyst delivers an area capacity of 4.8 mAh cm^(-2)under the high sulfur loading(6 mg cm^(-2))and low electrolyte/sulfur ratio(4.3 pL mg^(-1)).The strategy can be extended to 2D Ni foil,demonstrating its prospects in the construction of electrodes with high gravimetric/volumetric energy densities.The designed electrocatalyst of ultrathin nonlayered heterostructure will shed light on achieving high energy density lithium-sulfur batteries.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1200700)the National Natural Science Foundation of China(Grant Nos.T2222025 and 62174053)+5 种基金the Open Research Projects of Zhejiang Laboratory(Grant No.2021MD0AB03)the Shanghai Science and Technology Innovation Action Plan(Grant Nos.21JC1402000 and 21520714100)the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001)the Fundamental Research Funds for the Central Universitiessupport from the Zuckerman STEM Leadership ProgramPazy Research Foundation(Grant No.149-2020)。
文摘Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.
基金the Projects of Science and Technology Commission of Shanghai Municipality(19ZR1473800 and 14DZ2260800)the Shanghai Rising-Star Program(17QA1401400)+1 种基金Young Elite Scientists Sponsorship Program by CAST(YESS)the Fundamental Research Funds for the Central Universities.
文摘Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research interest.The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle.Transmission electron microscopy(TEM)with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology,structures and chemical compositions at atomic scale.The various external stimuli,such as thermal,electrical,mechanical,optical and magnetic fields,provide a platform to probe and engineer NVM devices inside TEM in real-time.Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution.This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package.In this review,the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced,with intermetallic compounds forming and degradation process investigated.The principles and challenges of TEM technology on NVM device study are also discussed.
基金supported in part by the National Natural Science Foundation of China(Grant Nos.61975056 and 61901173)the Shanghai Natural Science Foundation(Grant No.19ZR1416000)the Science and Technology Commission of Shanghai Municipality(Grant Nos.14DZ2260800 and 18511102500).
文摘Screening and diagnosing of abnormal Leukocytes are crucial for the diagnosis of immune diseases and Acute Lymphoblastic Leukemia(ALL).As the deterioration of abnormal leukocytes is mainly due to the changes in the chromatin distribution,which signicantly affects the absorption and reflection of light,the spectral feature is proved to be important for leukocytes classication and identication.This paper proposes an accurate identication method for healthy and abnormal leukocytes based on microscopic hyperspectral imaging(HSI)technology which combines the spectral information.The segmentation of nucleus and cytoplasm is obtained by the morphological watershed algorithm.Then,the spectral features are extracted and combined with the spatial features.Based on this,the support vector machine(SVM)is applied for classication ofve types of leukocytes and abnormal leukocytes.Compared with different classication methods,the proposed method utilizes spectral features which highlight the differences between healthy leukocytes and abnormal leukocytes,improving the accuracy in the classication and identication of leukocytes.This paper only selects one subtype of ALL for test,and the proposed method can be applied for detection of other leukemia in the future.
基金supported by the Major State Basic Research Development Program (Grant Nos. 2016YFA0203900, 2016YFB0400801 and 2015CB921600)Key Research Project of Frontier Sciences of Chinese Academy of Sciences (Nos. QYZDB-SSW-JSC016, QYZDY-SSW-JSC042)+2 种基金Strategic Priority Research Program of Chinese Academy of Sciences (XDPB12, XDB 3000000)Natural Science Foundation of China (Grant Nos. 61521001, 61574151, 61574152, 61674158, 61722408, 61734003 and 61835012)Natural Science Foundation of Shanghai (Grant No. 16ZR1447600, 17JC1400302)
文摘During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications.
基金supported by the National Natural Science Foundation of China(NSFC)under grant nos.61574059 and 61722402the National Key Research and Development Program of China(2016YFB0700700)+1 种基金Shu-Guang program(15SG20)CC of ECNU
文摘The beneficial effect of the alkali metals such as Na and K on the Cu（In.Ga）Se2 （CIGS） and Cu2ZnSn（S,Se）4 （CZTSSe） solar cells has been extensively investigated in the past two decades, however, in most of the studies the alkali metals were treated as dopants. Several recent studies have showed that the alkali metals may not only act as dopants but also form secondary phases in the absorber layer or on the surfaces of the films. Using the first-principles calculations, we screened out the most probable secondary phases of Na and K in CIGS and CZTSSe, and studied their electronic structures and optical properties. We found that all these alkali chalcogenide compounds have larger band gaps and lower VBM levels than CIGS and CZTSSe, because the existence of strong p-d coupling in CIS and CZTS pushes the valence band maximum （VBM） level up and reduces the band-gaps, while there is no such p-d coupling in these alkali chalcogenides. This band alignment repels the photo-generated holes from the secondary phases and prevents the electron-hole recombination. Moreover, the study on the optical properties of the secondary phases showed that the absorption coefficients of these alkali chalcogenides are much lower than those of CIGS and CZTSSe in the energy range of 0-3.4eV, which means that the alkali chalcogenides may not influence the absorption of solar light. Since the alkali metal dopants can passivate the grain boundaries and increase the hole carrier concentration, and meanwhile their related secondary phases have innocuous effect on the optical absorption and band alignment, we can understand why the alkali metal dopants can improve the CIGS and CZTSSe solar cell performance.
基金supported by NSFC under Grant Nos.62074057,62174056Projects of Science and Technology Commission of Shanghai Municipality Grant Nos.(19ZR1473800,18DZ2270800)+1 种基金‘Shuguang Program’supported by Shanghai Education Development Foundation and Shanghai Municipal Education Commissionthe Fundamental Research Funds for the Central Universities.
文摘Advanced electronic materials are the fundamental building blocks of integrated circuits(ICs).The microscale properties of electronic materials(e.g.,crystal structures,defects,and chemical properties)can have a considerable impact on the performance of ICs.Comprehensive characterization and analysis of the material in real time with high-spatial resolution are indispensable.In situ transmission electron microscope(TEM)with atomic resolution and external field can be applied as a physical simulation platform to study the evolution of electronic material in working conditions.The high-speed camera of the in situ TEM generates a high frame rate video,resulting in a large dataset that is beyond the data processing ability of researchers using the traditional method.To overcome this challenge,many works on automated TEM analysis by using machine-learning algorithm have been proposed.In this review,we introduce the technical evolution of TEM data acquisition,including analysis,and we summarize the application of machine learning to TEM data analysis in the aspects of morphology,defect,structure,and spectra.Some of the challenges of automated TEM analysis are given in the conclusion.
基金supported by the National Key R&D Program of China (2022YFB3605500 and 2022YFB3605503)the National Natural Science Foundation of China (62074039 and 12004074)+1 种基金China Postdoctoral Science Foundation (2020M681141)the National Postdoctoral Program for Innovative Talents (BX20190070)。
基金supported by National Key Research and Development Program of China(2021YFA1200700)The National Natural Science Foundation of China(No.52372120,T2222025 and 62174053)+1 种基金Shanghai Science and Technology Innovation Action Plan(21JC1402000 and 21520714100)the Fundamental Research Funds for the Central Universities。
文摘State number,operation power,dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy and low-power-consumption neuromorphic com-puting in hardware.However,high linearity and low power consump-tion couldn’t be simultaneously achieved by most of the reported synaptic devices,which limits the performance of the hardware.This work demonstrates van der Waals(vdW)stacked ferroelectric field-effect transistors(FeFET)with single-crystalline ferroelectric nanoflakes.Ferroelectrics are of fine vdW interface and partial polar-ization switching of multi-domains under electric field pulses,which makes the FeFETs exhibit multi-state memory characteristics and ex-cellent synaptic plasticity.They also exhibit a desired linear conduc-tance weight update with 128 conductance states,a sufficiently high dynamic range of G_(max)/G_(min)>120,and a low power consumption of 10 fJ/spike using identical pulses.Based on such an all-round device,a two-layer artificial neural network was built to conduct Modified Na-tional Institute of Standards and Technology(MNIST)digital num-bers and electrocardiogram(ECG)pattern-recognition simulations,with the high accuracies reaching 97.6%and 92.4%,respectively.The remarkable performance demonstrates that vdW-FeFET is of obvious advantages in high-precision neuromorphic computing applications.
基金supported by the National Natural Science Foundation of China(Nos.61775060,61275100,61761136006,61790583,and 61874043).
文摘The poor stability of halide perovskite nanocrystals(NCs)has severely hindered future practical application.Herein,we proposed a facile and effective ligand modification route to synthesize stable CsPbBr_(3) nanocrystals by introducing a double-terminal ligand,namely 4,4'-Azobis(4-cyanovalericacid)(CA),to replace the conventional oleic acid(OA)ligand at room temperature.The as-synthesized CsPbBr_(3)-CA not only possesses high photoluminescence quantum yield(72%)related to the reduced trap defects,but also shows significantly improved stability exposure to water,ethanol,light,and/or heat benefiting from the CA ligand anchored to NC surfaces tightly.The photoluminescence intensity of CsPbBr_(3)-CA maintains about 80%and 75%of its initial emission intensity after immersed in water or ethanol for 360 min,respectively,whereas that of the CsPbBr_(3)-OA was quenched completely within a few minutes.Moreover,an all-inorganic white light-emitting diode(LED)covered 126%National Television System Committee(NTSC)standard and 92%Rec.2020 standard was fabricated by combining the green CsPbBr_(3)-CA and commercial red-emitting K2SiF6:Mn4+(KSF)phosphors onto a blue LED chip.Thus,the presented work initiates the development of the room temperature preparation of high quality CsPbBr_(3) and shows prospect for next-generation displays.
基金supported by the Natural Science Foundation of China(Grant Nos.61835012,61722408,61725505,61521005,and 61905267)the Key Research Project of Frontier Sciences of the Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC016 and QYZDY-SSW-JSC042)+4 种基金the Key Research Program of Frontier Science,CAS(Grant No.ZDBS-LY-JSC045)the Major State Basic Research Development Program(Grant No.2016YFA0203900)the National Postdoctoral Program for Innovative Talents(BX20180329)the Natural Science Foundation of Shanghai(Grant Nos.16ZR1447600 and 17JC1400302)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44000000).
文摘The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes it difficult for devices to stand out.Here,we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake.Vanadium dioxide is a classical semiconductor with a narrow bandgap,a high temperature coefficient of resistance,and phase transformation.Molybdenum ditelluride,a typical two-dimensional material,is often used to construct optoelectronic devices.The heterostructure can realize three different functional modes:(i)the p-n junction exhibits ultrasensitive detection(450 nm-2μm)with a dark current down to 0.2 pA and a response time of 17μs,(ii)the Schottky junction works stably under extreme conditions such as a high temperature of 400 K,and(iii)the bolometer shows ultrabroad spectrum detection exceeding 10μm.The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation(LWIR).This type of photodetector combines versatile detection modes,shedding light on the hybrid application of novel and traditional materials,and is a prototype of advanced optoelectronic devices.
基金supported by the Major State Basic Research Development Program(Grant No.2013CB922302)the National Natural Science Foundation of China(Grant No.11374320)
文摘Manganese oxides with a perovskite-type Re_(1-x)D_xMnO_3(Re:heavy rare-earth elements,D:divalent alkali metal)structure have attracted interest because of the complex interaction between their electrons,lattices,and spins[1-5].Generally,manganese oxides with the structure Re_(1-x)D_xMnO_3 have special properties.For example,the half-metallic manganites,such as La_(2/3)Sr_(1/3)MnO_3 and La_(2/3)Ca_(1/3)MnO_3,wherein the conduction electrons are completely spin polarized。
基金Nanyang Technological University Presidential Postdoctoral Fellowship.The work is also supported by Ministry of Education(grant no.2017-T1-002-117 and RG 177/17)A*Star(grant no.SERC A1883c0002 and SERC 1720700038),Singapore.Z.H.acknowledges support from the China National Science Fund for Distinguished Young Scholars(61625505)Chinese Academ y of Sciences(ZDBS-LY-JSC025),and Sino-Russia International Joint Laboratory(18590750500).
文摘High-performance uncooled millimnetre and terahertz wave detectors are required as a building block for a wide range of applications.The state-of-the art technologies,however,are plagued by low sensitivity,narrow spectral bandwidth,and complicated architecture.Here,we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation.By making a nanogroove array in the grown InSb layer,strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces,which results in significant improvement in detecting performance.A noise equivalent power(NEP)of 2.2× 10^(-14)WHz^(-1/2) or a detectivity(D)of 2.7× 10^(12)cmHz^(1/2) W^(-1) at 1.75 mm(0.171 THz)is achieved at room temperature.By lowering the temperature to the thermoelectric cooling available 200 K,the corresponding NEP and D'of the nanogroove device can be improved to 3.8× 10^(-15)WHz^(-1/2) and 1.6× 10^(13) cm Hz^(-1/2) w^(-1),respectively.In addition,such a single device can perform broad spectral band detection from 0.9 mm(0.330 THz)to 9.4 mm(0.032 THz).Fast responses of 3.5μs and 780 ns are achieved at room temperature and 200 K,respectively.Such high-performance millimnetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications,walk-through security,biological diagnosis,spectroscopy,and remote sensing.In addition,the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.
基金National Natural Science Foundation of China(61704055,61874044,61604055)Program of Shanghai Science and Technology Committee(17142202500)+3 种基金Strategic Priority Research Program of ECNU of ChinaResearch Funds of Mo E Nanophotonics&Advanced Instrument Engineering Research CenterFundamental Research Funds for the Central UniversitiesJapan Society for the Promotion of Science(18H01469)。
文摘All-inorganic perovskite micro/nanolasers are emerging as a class of miniaturized coherent photonic sources for many potential applications,such as optical communication,computing,and imaging,owing to their ultracompact sizes,highly localized coherent output,and broadband wavelength tunability.However,to achieve singlemode laser emission in the microscale perovskite cavity is still challenging.Herein,we report unprecedented single-mode laser operations at room temperature in self-assembly Cs Pb X3 microcavities over an ultrawide pumping wavelength range of 400–2300 nm,covering one-to five-photon absorption processes.The superior frequency down-and upconversion single-mode lasing manifests high multiphoton absorption efficiency and excellent optical gain from the electron–hole plasma state in the perovskite microcavities.Through direct compositional modulation,the wavelength of a single-mode Cs Pb X3 microlaser can be continuously tuned from blue-violet to green(427–543 nm).The laser emission remains stable and robust after long-term high-intensity excitation for over 12 h(up to 4.3×107 excitation cycles)in the ambient atmosphere.Moreover,the pump-wavelength dependence of the threshold,as well as the detailed lasing dynamics such as the gain-switching and electron–hole plasma mechanisms,are systematically investigated to shed insight into the more fundamental issues of the lasing processes in Cs Pb X3 perovskite microcavities.
基金National Natural Science Foundation of China(61790583,61874043,61874072,21703140)Special-key project of the“Innovative Research Plan”+1 种基金Shanghai Municipality Bureau of Education(2019-01-07-00-02-E00075)Aero-Science Fund(201824X001)。
文摘Silicon-based light sources, including light-emitting diodes(LEDs) and laser diodes(LDs) for information transmission, are urgently needed for developing monolithic integrated silicon photonics. Silicon with erbium ions(Er^(3+)) doped by ion implantation is considered a promising approach, but it suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 μm from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA(~0.8 A∕cm^(2)). Time-resolved photoluminescence and photocurrent results have revealed the complex carrier transfer dynamics by relaxing electrons from the Si conduction band to the Er^(3+) ion. This picture differs from the frequently assumed energy transfer via electron–hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves the way for fabricating superluminescent diodes or efficient LEDs at communication wavelengths based on rare-earth-doped silicon.
