The research area is situated in the western part of Tarim basin,which includes Awati depression and Bachu uplifted block. It underwent three times processes of compression in a large scale and a near term extension s...The research area is situated in the western part of Tarim basin,which includes Awati depression and Bachu uplifted block. It underwent three times processes of compression in a large scale and a near term extension since Cambrian. The first compression occurred during Middle Cambrian to Devonian, which formed fault band folds in NW axial direction. They were "under-water uplift"and distributed all over the research area. The second compression occurred in Late Permian and formed fault band folds and a few fault propagation folds in NS axial direction. They are developed near Tumuxiuke fault belt and the northern research area. The western anticline is bigger than the eastern one in extent and size. The third compression occurred during Palaeogene to Quaternary and formed tumuxiuke fault belt and fault propagation folds in NW direction. They are distributed over the south part of the research area. Tumuxiuke fault belt is a big scale dextral reversed strike-slip fault belt; it transformed or destroyed the fold structure of the research area. A short-term extension occurred during Early Permian. Tarim Basin is in the rift forming stage of craton, and there exist widespread basic volcanic rocks, basic intrusive bodies and dikes.展开更多
Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonat...Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.展开更多
文摘The research area is situated in the western part of Tarim basin,which includes Awati depression and Bachu uplifted block. It underwent three times processes of compression in a large scale and a near term extension since Cambrian. The first compression occurred during Middle Cambrian to Devonian, which formed fault band folds in NW axial direction. They were "under-water uplift"and distributed all over the research area. The second compression occurred in Late Permian and formed fault band folds and a few fault propagation folds in NS axial direction. They are developed near Tumuxiuke fault belt and the northern research area. The western anticline is bigger than the eastern one in extent and size. The third compression occurred during Palaeogene to Quaternary and formed tumuxiuke fault belt and fault propagation folds in NW direction. They are distributed over the south part of the research area. Tumuxiuke fault belt is a big scale dextral reversed strike-slip fault belt; it transformed or destroyed the fold structure of the research area. A short-term extension occurred during Early Permian. Tarim Basin is in the rift forming stage of craton, and there exist widespread basic volcanic rocks, basic intrusive bodies and dikes.
基金National Science Foundation(2023775)Air Force Office of Scientific Research(FA 9550-17-1-0071)Defense Advanced Research Projects Agency(HR0011-20-C-0137)。
文摘Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.
