This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,a...This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.展开更多
Quantum dot lasers are excellent on-chip light sources,offering high defect tolerance,low threshold,low temperature variation,and high feedback insensitivity.Yet a monolithic integration technique combining epitaxial ...Quantum dot lasers are excellent on-chip light sources,offering high defect tolerance,low threshold,low temperature variation,and high feedback insensitivity.Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits.We present here,for the first time to our knowledge,a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures.This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si.As an illustration of the potential of this platform,we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror.Due to the dispersion compensation effect of the waveguide mirror,the pulse width of the mode-locked laser is reduced by a factor of 2.8.展开更多
基金Advanced Research Projects Agency—Energy(DE-AR0001039)。
文摘This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.
基金Advanced Research Projects Agency-Energy(DE-AR0001039)。
文摘Quantum dot lasers are excellent on-chip light sources,offering high defect tolerance,low threshold,low temperature variation,and high feedback insensitivity.Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits.We present here,for the first time to our knowledge,a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures.This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si.As an illustration of the potential of this platform,we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror.Due to the dispersion compensation effect of the waveguide mirror,the pulse width of the mode-locked laser is reduced by a factor of 2.8.
