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Numerical Simulation of Continuous Tension Leveling Process of Thin Strip Steel and Its Application 被引量:12
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作者 LI Sheng-zhi YIN Yuan-de +2 位作者 XU Jie HOU Jun-ming jaehong yoon 《Journal of Iron and Steel Research(International)》 SCIE EI CAS CSCD 2007年第6期8-13,共6页
Cold-rolled thin strip steel of high flatness quality undergoes multistage deformation during tension leveling. Thus, the parameters of set-up and manipulating are more difficult. With the aid of FE code MSC. MARC, th... Cold-rolled thin strip steel of high flatness quality undergoes multistage deformation during tension leveling. Thus, the parameters of set-up and manipulating are more difficult. With the aid of FE code MSC. MARC, the tension leveling process of thin strip steel was numerically simulated. Concentrating on the influence of the roll intermeshes in 2# anti-cambering on the distribution and magnitude of residual stresses in leveled strip steel, several experiments were clone with the tension leveler based on the results from the simulation. It was found from the simulation that the magnitude of longitudinal residual stresses in the cross-section of the leveled strip steel regularly presents obvious interdependence with the roll intermeshes in 2# anti-cambering. In addition, there is a steady zone as the longitudinal residual stresses of the surface layers in leveled strip steel vary with the roll intermeshes of 2# anticambering, which is of importance in the manipulation of tension levelers. It was also found that the distribution of strains and stresses across the width of strip steel is uneven during leveling or after removing the tension loaded upon the strip, from which it was found that 3D simulation could not be replaced by 2D analysis because 2D analysis in this case cannot represent the physical behavior of strip steel deformation during tension leveling. 展开更多
关键词 cold-rolled strip steel FLATNESS tension leveling numerical simulation shell element residual stress
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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)_2 precursor 被引量:3
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作者 Jusang Park Han-Bo-Ram Lee +5 位作者 Doyoung Kim jaehong yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2013年第3期403-407,共5页
Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics,... Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)). 展开更多
关键词 PE-ALD Th-ALD cobalt metal thin films metal organic precursors
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