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Elimination of phosphorus vaporizing from molten silicon at finite reduced pressure 被引量:5
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作者 郑淞生 jafar safarian +3 位作者 Seongho SEOK Sungwook KIM Merete TANGSTAD 罗学涛 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第3期697-702,共6页
Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evapora... Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% (460ppmw) to around 0.001% (10ppmw) under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. Both experimental data and calculation results agree that at high phosphorus concentration, phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content. 展开更多
关键词 phosphorus concentration molten silicon equilibrium partial pressure TEMPERATURE chamber pressure
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Removal of SiC particles from solar grade silicon melts by imposition of high frequency magnetic field
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作者 Mehdi KADKHODABEIGI jafar safarian +2 位作者 Halvard TVEIT Merete TANGSTAD Stein Tore JOHANSEN 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2012年第11期2813-2821,共9页
Non-metallic particles and metallic impurities present in the feedstock affect the electrical and mechanical properties of high quality silicon which is used in critical applications such as photovoltaic solar cells a... Non-metallic particles and metallic impurities present in the feedstock affect the electrical and mechanical properties of high quality silicon which is used in critical applications such as photovoltaic solar cells and electronic devices. SiC particles strongly deteriorate the mechanical properties of photovoltaic cells and cause shunting problem. Therefore, these particles should be removed from silicon before solar cells are fabricated from this material. Separation of non-metallic particles from liquid metals by imposing an electromagnetic field was identified as an enhanced technology to produce ultra pure metals. Application of this method for removal of SiC particles from metallurgical grade silicon (MG-Si) was presented. Numerical methods based on a combination of classical models for inclusion removal and computational fluid dynamics (CFD) were developed to calculate the particle concentration and separation efficiency from the melt. In order to check efficiency of the method, several experiments were done using an induction furnace. The experimental results show that this method can be effectively applied to purifying silicon melts from the non-metallic inclusions. The results are in a good agreement with the predictions made by the model. 展开更多
关键词 SiC particle electromagnetic separation solar grade silicon (SoG-Si) photovoltaic cells computational fluid dynamics(CFD) non-metallic particles metallic impurities
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