Bulk acoustic wave(BAW)filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor(CMOS)compatible integr...Bulk acoustic wave(BAW)filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor(CMOS)compatible integration process.However,it is challenging for a traditional aluminum nitride(AlN)-based BAW filter to meet several allocated 5G bands with more than a 5%fractional bandwidth via an acoustic-only approach.In this work,we propose an Al_(0.8)Sc_(0.2)N-based film bulk acoustic wave resonator(FBAR)for the design of radio frequency(RF)filters.By taking advantage of a high-quality Al_(0.8)Sc_(0.2)N thin film,the fabricated resonators demonstrate a large K_(eff)^(2) of 14.5%and an excellent figure of merit(FOM)up to 62.The temperature coefficient of frequency(TCF)of the proposed resonator is measured to be−19.2 ppm/℃,indicating excellent temperature stability.The fabricated filter has a center frequency of 4.24 GHz,a−3 dB bandwidth of 215 MHz,a small insertion loss(IL)of 1.881 dB,and a rejection>32 dB.This work paves the way for the realization of wideband acoustic filters operating in the 5G band.展开更多
基金the Fundamental Research Funds for the Central Universities under Grant No.2042022kf1027.
文摘Bulk acoustic wave(BAW)filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor(CMOS)compatible integration process.However,it is challenging for a traditional aluminum nitride(AlN)-based BAW filter to meet several allocated 5G bands with more than a 5%fractional bandwidth via an acoustic-only approach.In this work,we propose an Al_(0.8)Sc_(0.2)N-based film bulk acoustic wave resonator(FBAR)for the design of radio frequency(RF)filters.By taking advantage of a high-quality Al_(0.8)Sc_(0.2)N thin film,the fabricated resonators demonstrate a large K_(eff)^(2) of 14.5%and an excellent figure of merit(FOM)up to 62.The temperature coefficient of frequency(TCF)of the proposed resonator is measured to be−19.2 ppm/℃,indicating excellent temperature stability.The fabricated filter has a center frequency of 4.24 GHz,a−3 dB bandwidth of 215 MHz,a small insertion loss(IL)of 1.881 dB,and a rejection>32 dB.This work paves the way for the realization of wideband acoustic filters operating in the 5G band.
