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Raman scattering study of the phonon dispersion in twisted bilayer graphene 被引量:2
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作者 jessica campos-delgado Luiz G. Cangado +2 位作者 Carlos A. Achete Ado Jorio Jean-Pierre Raskin 《Nano Research》 SCIE EI CAS CSCD 2013年第4期269-274,共6页
Bilayer graphene with a twist angle O between the layers generates a superlattice structure known as a Moir6 pattern. This superlattice provides a O-dependent q wavevector that activates phonons in the interior of the... Bilayer graphene with a twist angle O between the layers generates a superlattice structure known as a Moir6 pattern. This superlattice provides a O-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO' phonons) are observed. 展开更多
关键词 twisted bilayer graphene Raman spectroscopy phonon branches
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