Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular,...Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.展开更多
As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)becomes increasingly crucial.Traditional test element group(TEG)measurements are becoming i...As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)becomes increasingly crucial.Traditional test element group(TEG)measurements are becoming inadequate for representing the fine,repetitive patterns in cell blocks.Conventional non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural analysis.Consequently,there is a pressing need for small-spot and non-destructive metrology methods.To address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with super-resolution.Utilizing microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μm.This approach effectively breaks the diffraction limit,significantly enhancing the magnification of the system.The MAHSI system incorporating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera pixel.The achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is 450X.The MAHSI system enables measurement of local uniformity in critical areas like corners and edges of DRAM cell blocks,areas previously challenging to inspect with conventional OCD methods.To our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in complex 3D structures of semiconductor devices.展开更多
基金supported in part by NRF Korea (No. NRF2015R1D1A1A01058672)Korea Atomic Energy Research Institutesupported by the GPF Program (No. 2015H1A2A1034200) of NRF
文摘Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.
文摘As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)becomes increasingly crucial.Traditional test element group(TEG)measurements are becoming inadequate for representing the fine,repetitive patterns in cell blocks.Conventional non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural analysis.Consequently,there is a pressing need for small-spot and non-destructive metrology methods.To address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with super-resolution.Utilizing microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μm.This approach effectively breaks the diffraction limit,significantly enhancing the magnification of the system.The MAHSI system incorporating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera pixel.The achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is 450X.The MAHSI system enables measurement of local uniformity in critical areas like corners and edges of DRAM cell blocks,areas previously challenging to inspect with conventional OCD methods.To our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in complex 3D structures of semiconductor devices.
