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Mechanism of defect evolution in H^(+)and He^(+)implanted InP
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作者 Ren-Jie Liu Jia-Jie Lin +5 位作者 N Daghbouj jia-liang sun Tian-Gui You Peng Gao Nie-Feng sun Min Liao 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第8期70-74,共5页
The defect evolution in InP with the 75 keV H^(+)and 115 keV He^(+)implantation at room temperature after subsequent annealing has been investigated in detail.With the same ion implantation fluence,the He^(+)implantat... The defect evolution in InP with the 75 keV H^(+)and 115 keV He^(+)implantation at room temperature after subsequent annealing has been investigated in detail.With the same ion implantation fluence,the He^(+)implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H^(+)implanted InP.After annealing,the H^(+)implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects.However,the He molecules were stored into the large bubbles which relaxed toward the free surface,creating blisters at the high fluence. 展开更多
关键词 ion implantation defect evolution ion-slicing damaged band
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Heterogeneous integration of GaSb layer on(100)Si substrate by ion-slicing technique
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作者 Ren-Jie Liu Jia-Jie Lin +5 位作者 Zheng-Hao Shen jia-liang sun Tian-Gui You Jin Li Min Liao Yi-Chun Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第7期442-447,共6页
Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ... Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC). 展开更多
关键词 ion-slicing technique heterogeneous integration GaSbOI
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Effective Identification and Annotation of Fungal Genomes
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作者 Jian Liu jia-liang sun Yong-Zhuang Liu 《Journal of Computer Science & Technology》 SCIE EI CSCD 2021年第2期248-260,共13页
In the past few decades,the dangers of mycosis have caused widespread concern.With the development of the sequencing technology,the effective analysis of fungal sequencing data has become a hotspot.With the gradual in... In the past few decades,the dangers of mycosis have caused widespread concern.With the development of the sequencing technology,the effective analysis of fungal sequencing data has become a hotspot.With the gradual increase of fungal sequencing data,there is now a lack of sufficient approaches for the identification and functional annotation of fungal chromosomal genomes.To overcome this challenge,this paper firstly deals with the approaches of the identification and annotation of fungal genomes based on short and long reads sequenced by using multiple platforms such as Illumina and Pacbio.Then this paper develops an automated bioinformatics pipeline called PFGI for the identification and annotation task.The experimental evaluation on a real-world dataset ENA(European Nucleotide Archive)shows that PFGI provides a user-friendly way to perform fungal identification and annotation based on the sequencing data analysis,and could provide accurate analyzing results,accurate to the species level(97%sequence identity). 展开更多
关键词 fungal genome fungal identification bioinformatics pipeline
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