Glaciers,as“solid reservoirs”,are precious resources in arid areas.The study of glaciers is of great significance to the sustainable development and management of agriculture and the economy in northern Xinjiang.The...Glaciers,as“solid reservoirs”,are precious resources in arid areas.The study of glaciers is of great significance to the sustainable development and management of agriculture and the economy in northern Xinjiang.The area of glacier distribution on the 1963 topographic map data,1975 MSS data,2000 ETM data,2008 CBERS-2 data,2014 and 2018 ETM+were collected as secondary data.According to the remote sensing survey,the glacier areas in Northern Xinjiang are identified during 1963-2018.Based on the evolution of glacier area in the past 55 years,and using two scenarios,the average annual decrease area of a region during the whole 1963-2018 and the period with the minimum reduction area,the glacier areas of Southern Tianshan Mountains,Western Tianshan Mountains,Eastern Tianshan Mountains,the Sawuer Mountains and Altai Mountains in Northern Xinjiang,and the whole northern Xinjiang in 2030,2040,2050,and 2100 are examined and predicted.In 2100,the glacier area in Northern Xinjiang may decrease by 43%-59%.展开更多
We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is th...We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.展开更多
基金jointly supported by the“Technology and Demonstration Applications for Monitoring High Snow-glacier and Geological Hazards in Asia and the Arctic”of Earth Observations Group Project Funding(2021YFE0116800)。
文摘Glaciers,as“solid reservoirs”,are precious resources in arid areas.The study of glaciers is of great significance to the sustainable development and management of agriculture and the economy in northern Xinjiang.The area of glacier distribution on the 1963 topographic map data,1975 MSS data,2000 ETM data,2008 CBERS-2 data,2014 and 2018 ETM+were collected as secondary data.According to the remote sensing survey,the glacier areas in Northern Xinjiang are identified during 1963-2018.Based on the evolution of glacier area in the past 55 years,and using two scenarios,the average annual decrease area of a region during the whole 1963-2018 and the period with the minimum reduction area,the glacier areas of Southern Tianshan Mountains,Western Tianshan Mountains,Eastern Tianshan Mountains,the Sawuer Mountains and Altai Mountains in Northern Xinjiang,and the whole northern Xinjiang in 2030,2040,2050,and 2100 are examined and predicted.In 2100,the glacier area in Northern Xinjiang may decrease by 43%-59%.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874179,61804161,and 61975121)the National Key Research and Development Program of China(Grant No.2019YFB2203400).
文摘We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.
