Complete active–passive photonic integration based on GaN-on-silicon platform

Suitable optoelectronic integration platforms enable the realization of numerous application systems at the chip scale and are highly anticipated in the rapidly growing market.We report a GaN-on-silicon-based photonic integration platform and demonstrate a photonic integrated chip comprising a light source,modulator,photodiode(PD),waveguide,and Y-branch splitter based on this platform.The light source,modulator,and PD adopt the same multiple quantum wells(MQWs)diode structure without encountering incompatibility problems faced in other photonic integration approaches.The waveguide-structure MQW electro-absorption modulator has obvious indirect light modulation capability,and its absorption coefficient changes with the applied bias voltage.The results successfully validate the data transmission and processing using near-ultraviolet light with peak emission wavelength of 386 nm.The proposed complete active–passive approach that has simple fabrication and low cost provides new prospects for next-generation photonic integration.

Versatile monolithic optoelectronic platform for bending angle sensing and visible light communication

In this Letter,a kind of optoelectronic chip based on III-nitride is developed as a versatile platform for both fiber-optic sensing and optical communication.The optoelectronic chip consists of a light-emitting diode(LED)and a photodiode(PD),which are fabricated with the same multi-quantum well(MQW)structure and monolithically integrated on a sapphire substrate.By integrating the chip with a polydimethylsiloxane(PDMS)encapsulated silica fiber-optic sensor,it can effectively detect the bending-induced light intensity change and generate the photocurrent to point out the angle changes.Besides,such an optoelectronic chip can also be treated as a transceiver,enabling duplex communication for real-time audio and video transmission.The proposed optoelectronic chip has the advantages of miniaturization,versatility,and ease of massive manufacturing,making it promising in integrated optical sensing and communication(IOSAC)systems.

Self-filtering illumination source and application in fluorescence imaging

To date,fluorescence imaging systems have all relied on at least one beam splitter(BS)to ensure the separation of excitation light and fluorescence.Here,we reported SiO2=TiO2 multi-layer long pass filter integrated GaN LED.It is considered as the potential source for imaging systems.Experimental results indicate that the GaN LED shows blue emission peaked at 470.3 nm and can be used to excite dye materials.Integrating with a long pass filter(550 nm),the light source can be used to establish a real-time fluorescence detection for dyes that emit light above 550 nm.More interestingly,with this source,a real-time imaging system with signature words written with the dyes,such as‘NJUPT’,can be converted into CCD images.This work may lead to a new strategy for integrating light sources and BS mirrors to build mini and smart fluorescence imaging systems.