High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrat...High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.展开更多
基金National Natural Science Foundation of China (Grant Nos. 52002219, 51932004 and 61975098)Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002)+2 种基金Shenzhen Fundamental Research Program (Grant No. JCYJ20210324132014038)Natural Science Foundation of Shandong (Grant No. ZR202105230005)the 111 Project 2.0 (Grant No. BP2018013)。
文摘High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.
