Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor.The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of InSe is obtained when negative gate voltages are biased.Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between InSe and the solid-ion-conductor substrate.By comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of InSe on solid ion conductors is comparable to that on the SiO2 substrate.Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric.Here we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with InSe as channel material,hBN as dielectric,and graphite as gate.The fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric.Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained.Taking advantages of the mechanical flexibility of these materials,we integrated the heterostructured InSe FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.

Moiré-driven electromagnetic responses and magic angles in a sandwiched hyperbolic metasurface

Recent moiréconfigurations provide a new platform for tunable and sensitive photonic responses,as their enhanced light–matter interactions originate from the relative displacement or rotation angle in a stacking bilayer or multilayer periodic array.However,previous findings are mostly focused on atomically thin condensed matter,with limitations on the fabrication of multilayer structures and the control of rotation angles.Structured microwave moiréconfigurations are still difficult to realize.Here,we design a novel moiréstructure,which presents unprecedented capability in the manipulation of light–matter interactions.Based on the effective medium theory and S-parameter retrieval process,the rotation matrix is introduced into the dispersion relation to analyze the underlying physical mechanism,where the permittivity tensor transforms from a diagonal matrix to a fully populated one,whereas the permeability tensor evolves from a unit matrix to a diagonal one and finally becomes fully filled,so that the electromagnetic responses change drastically as a result of stacking and rotation.Besides,the experiment and simulation results reveal hybridization of eigenmodes,drastic manipulation of surface states,and magic angle properties by controlling the mutual rotation angles between two isolated layers.Here,not only a more precisely controllable bilayer hyperbolic metasurface is introduced to moiréphysics,the findings also open up a new avenue to realize flat bands at arbitrary frequencies,which shows great potential in active engineering of surface waves and designing multifunctional plasmonic devices.

Operational effects of the UNOT gate on classical and quantum correlations

The NOT gate that flips a classical bit is ubiquitous in classical information processing.However its quantum analogue,the universal NOT(UNOT) gate that flips a quantum spin in any alignment into its antipodal counterpart is strictly forbidden.Here we explore the connection between this discrepancy and how UNOT gates affect classical and quantum correlations.We show that while a UNOT gate always preserves classical correlations between two spins,it can non-locally increase or decrease their shared discord in ways that allow violation of the data processing inequality.We experimentally illustrate this using a multi-level trapped ^(171)Yb^+ ion that allows simulation of anti-unitary operations.

Coherent Random Lasing Realized in Polymer Vesicles

We have demonstrated the realization of a coherent vesicle random lasing(VRL)from the dye doped azobenzene polymer vesicles self-assembled in the tetrahydrofuran-water system,which contains a double-walled structure:a hydrophilic and hydrophobic part.The effect of the dye and azobenzene polymer concentration on the threshold of random laser has been researched.The threshold of random laser decreases with an increase in the concentration of the pyrromethene 597(PM597)laser and azobenzene polymer.Moreover,the scattering of small size group vesicles is attributed to providing a loop to boost the coherent random laser through the Fourier transform analysis.Due to the vesicles having the similar structure with the cell,the generation of coherent random lasers from vesicles expand random lasers to the biomedicine filed.

Structural phase transition and dielectric switching in an organic-inorganic hybrid rare-earth double perovskite-type compound:(DMP)_(2)LaRb(NO_(3))_(6)(DMP=N,N-dimethylpyrrolidinium cation)

In recent years,it has been found that the flexibility of structure and diversity of the components endow quite an amount of the organic-inorganic hybrid perovskites with novel properties,i.e.,structural phase transitions.Considering the natural advantage of the perovskite-type structure in generation of stimuliresponsive or smart materials,we synthesized an organic-inorganic hybrid rare-earth double perovskitetype compound,(DMP)_(2) LaRb(NO_(3))_(6)(DMP=N,N-dimethylpyrrolidinium cation,1).It shows reversible phase transition at 219/209 K(heating/cooling).Variable-temperature single-crystal structure analysis and dielectric constant measurements reveal that the thermal vibrations of the polar cation guests and the distortion of the anionic cage-like framework are the origin of the phase transition.Meanwhile,the movement of polar cation in crystal lattices arouses dielectric transition between the low-and highdielectric states,resulting in a switchable property of dielectric constant.The results reveal that the rare-earth double perovskite provides a promising platform for achieving switchable physical/chemical properties.

Temperature Sensitivity of Polymer Fiber Microlasers

There are many kinds of materials or methods used to make optical microcavities,and they have many different geometric structures.And electrospinning technique has become a very convenient and easy one to prepare polymer fiber.Based on this situation,PM597-doped polymer solution was prepared into high-performance fibers with different diameters by electrospinning technology in our work.In order to better study the temperature sensing of polymer fiber whispering gallery mode,we have placed it on two different substrates with gold and aluminum.A 532 nm pulsed laser beam was used to excite a single fiber in the radial direction,then the whispering gallery mode(WGM)laser was observed and the distribution of WGM was determined by theoretical calculations.The threshold of samples on aluminum substrate is 0.4μJ.In addition,it is found that the samples on aluminum substrate performed better in temperature sensing,and the value is 0.13 nm/℃.As a result,WGM polymer fiber microcavities on aluminum substrate made by electrospinning technology have very broad development prospects in biosensing,optical pump lasers and other applications.