Prevention effect of medical self-crosslinking sodium hyaluronate gel on epidural scar adhesion after laminectomy

Objective:To analyze the effect and medical sclf-crosslinking sodium hyaluronate gel on epidural scar adhesion after laminectomy.Methods:A total of 24 New Zealand L5 laminectomy rabbits were randomly divided into four groups,group A as the control group without any treatment:group B covered by sodium hyaluronate gel;group C and group D covered by 0.5 and1.0 mL medical self-crosslinking sodium hyaluronate gel.All rabbits were scored at various time points after 2.4,6,8,12 weeks,then the formation of scar was observed.Results:In Groups B,C,D loose scar tissue occurred after 2 weeks of the operation,scar tissues were significantly less than that in group A,with mild inflammatory reaction.After 8 weeks,the scar tissues of group B were significantly more than that of groups C,D.After two weeks,group B,C were back to the preoperative level;After 4 weeks,group D was back to the preoperative level;After four weeks,the CSEP of group A was increased significantly,which was significantly higher than that in groups B,C,D.The motor function score of group A,group B and group C were the same as preoperative,but that in group D it was decreased significantly,and then it gradually recovered.After 4 weeks it kept a stable level.The motor function score of group A was decreased gradually after the operation,which kept a stable level after 4 weeks,the motor function score was significantly lower man that in groups B,C,D.Conclusions:Determination of somatosensory evoked potentials is sensitive indicator of spinal cord injury;Application of medical selfcrosslinking sodium hyaluronate gel is effective on epidural scar adhesion after laminectomy.

Magnetization reorientation induced by spin-orbit torque in YIG/Pt bilayers

In this work,we report the reorientation of magnetization by spin-orbit torque(SOT)in YIG/Pt bilayers.The SOT is investigated by measuring the spin Hall magnetoresistance(SMR),which is highly sensitive to the direction of magnetic moment of YIG.An external in-plane rotating magnetic field which is applied to the YIG/Pt bilayers,and the evolutions of SMR under different injected currents in the Pt layer,result in deviation of SMR curve from the standard shape.We conclude that the SOT caused by spin accumulation near the interface between YIG and Pt can effectively reorient the inplane magnetic moment of YIG.This discovery provides an effective way to modulate YIG magnetic moments by electrical methods.

Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2blocking layer

The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO_(2)/Ti/Pt device

The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.