We report comprehensive investigations into the structure of high-quality(111)-oriented SrRuO_(3)films on SrTiO_(3)substrates to elucidate the effect of(111)heteroepitaxial strain.We found that SrRuO_(3)film with a th...We report comprehensive investigations into the structure of high-quality(111)-oriented SrRuO_(3)films on SrTiO_(3)substrates to elucidate the effect of(111)heteroepitaxial strain.We found that SrRuO_(3)film with a thickness of~40 nm is compressively strained in plane on the substrate with full coherency.Nevertheless,the out-of-plane spacing is almost the same as in the bulk,which is at odds with the conventional paradigm.By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images,we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c+octahedral tilting and the formation of three equivalent domain structures on the(111)SrTiO_(3)substrate.This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the(111)heteroepitaxial strain.展开更多
Complex oxide interfaces have been one of the central focuses in condensed matter physics and ma-terial science.Over the past decade,aberration corrected scanning transmission electron microscopy and spectroscopy has ...Complex oxide interfaces have been one of the central focuses in condensed matter physics and ma-terial science.Over the past decade,aberration corrected scanning transmission electron microscopy and spectroscopy has proven to be invaluable to visualize and understand the emerging quantum phenomena at an interface.In this paper,we briefly review some recent progress in the utilization of electron microscopy to probe interfaces.Specifically,we discuss several important challenges for electron microscopy to advance our understanding on interface phenomena,from the perspective of variable temperature,magnetism,electron energy loss spectroscopy analysis,electronic symmetry,and defects probing.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0303600)the National Natural Science Foundation of China(Grant No.11974409)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB33000000)
文摘We report comprehensive investigations into the structure of high-quality(111)-oriented SrRuO_(3)films on SrTiO_(3)substrates to elucidate the effect of(111)heteroepitaxial strain.We found that SrRuO_(3)film with a thickness of~40 nm is compressively strained in plane on the substrate with full coherency.Nevertheless,the out-of-plane spacing is almost the same as in the bulk,which is at odds with the conventional paradigm.By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images,we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c+octahedral tilting and the formation of three equivalent domain structures on the(111)SrTiO_(3)substrate.This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the(111)heteroepitaxial strain.
基金supported by the US Department of Energy(DOE)under Grant No.DOE DE-SC0002136.Z.W.and Y.Z.acknowledge the support by the U.S.Department of Energy,Office of Basic Energy Science,Division of Materials Science and Engineering,under contract no.DESC0012704H.G.acknowledges the support by Shanghai Municipal Natural Science Foundation(No.19ZR1402800)Shanghai Municipal Natural Science Foundation(No.18JC1411400).
文摘Complex oxide interfaces have been one of the central focuses in condensed matter physics and ma-terial science.Over the past decade,aberration corrected scanning transmission electron microscopy and spectroscopy has proven to be invaluable to visualize and understand the emerging quantum phenomena at an interface.In this paper,we briefly review some recent progress in the utilization of electron microscopy to probe interfaces.Specifically,we discuss several important challenges for electron microscopy to advance our understanding on interface phenomena,from the perspective of variable temperature,magnetism,electron energy loss spectroscopy analysis,electronic symmetry,and defects probing.
