The carbide behavior of a directionalIy solidified Co-base superalloy DZ40M has been investigatedafter creep at 700° and 900°. During the high temperature creep, a great amount of secondary carbide, M3C6 pre...The carbide behavior of a directionalIy solidified Co-base superalloy DZ40M has been investigatedafter creep at 700° and 900°. During the high temperature creep, a great amount of secondary carbide, M3C6 precipitated in alloy matrix. At 700℃, the M23C6 precipitation occurred in slip bands, indicating that it was stress-induced, while at 900℃, M23C6 formed surrounding the primary carbides, which is a characteristic of thermally aged alloy. The M23C6 particles pinned up dislocations and subgrain boundaries, strengthening the alloy matrix effectively. The creep crack initiation of DZ40M alloy was exclusively related to the primary carbides. The fracture of the primary carbide and the crack at the interface between them and matrix resulted in the crack formation. Furthermore, it was found that at 900℃, the surface of specimens was oxidized severely and the preferentially oxidized primary carbides acted as crack initiation sites.展开更多
The deposition of lnxGa1-xAs (0.25≤x≤0 .5) on (311)B GaAs surfaces using solid source molecular bea m epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots coul...The deposition of lnxGa1-xAs (0.25≤x≤0 .5) on (311)B GaAs surfaces using solid source molecular bea m epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation. (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.展开更多
文摘The carbide behavior of a directionalIy solidified Co-base superalloy DZ40M has been investigatedafter creep at 700° and 900°. During the high temperature creep, a great amount of secondary carbide, M3C6 precipitated in alloy matrix. At 700℃, the M23C6 precipitation occurred in slip bands, indicating that it was stress-induced, while at 900℃, M23C6 formed surrounding the primary carbides, which is a characteristic of thermally aged alloy. The M23C6 particles pinned up dislocations and subgrain boundaries, strengthening the alloy matrix effectively. The creep crack initiation of DZ40M alloy was exclusively related to the primary carbides. The fracture of the primary carbide and the crack at the interface between them and matrix resulted in the crack formation. Furthermore, it was found that at 900℃, the surface of specimens was oxidized severely and the preferentially oxidized primary carbides acted as crack initiation sites.
文摘The deposition of lnxGa1-xAs (0.25≤x≤0 .5) on (311)B GaAs surfaces using solid source molecular bea m epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation. (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.
