Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable cl...Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.展开更多
基金support from the National Key R&D Program of China(No.2019YFA0705201)the National Natural Science Foundation of China(No.62174042)the Heilongjiang Touyan Team.
文摘Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.
