Two-dimensional(2D)transition metal dichalcogenides(TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors,while it is still a challenge to achieve excellent and stable near-i...Two-dimensional(2D)transition metal dichalcogenides(TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors,while it is still a challenge to achieve excellent and stable near-infrared(NIR)photoresponse.Here,a MoS_(2)–2DPI(2D-polyimide(2DPI))heterojunction-based phototransistor(HPT)was fabricated.Near-infrared photodetection with excellent performance has been realized.This HPT exhibited a photoresponsivity of 390.5 A/W,a specific detectivity of 5.10×10^(12)Jones,a photogain 1.04×10^(5),and a photoresponse rise and decay time of 400 and 430 ms(λ=900 nm,P=16.2μW/cm^(2)),respectively.It also shows a broadband wavelength response from 405 to 1,020 nm.This superior performance could be attributed to the strong near-infrared absorption and the type-II(staggered)band alignment which ensures efficient charge transfer from 2DPI to MoS_(2).The face-to-face spatial configuration of MoS_(2)–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface,electron and holes can be separated due to the large band offsets.This work presents a significant step for the manipulation of high-performance NIR photodetector of twodimensional covalent organic polymer-sensitized monolayer TMDCs.展开更多
基金the National Natural Science Foundation of China(Nos.21872103 and 52073208).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors,while it is still a challenge to achieve excellent and stable near-infrared(NIR)photoresponse.Here,a MoS_(2)–2DPI(2D-polyimide(2DPI))heterojunction-based phototransistor(HPT)was fabricated.Near-infrared photodetection with excellent performance has been realized.This HPT exhibited a photoresponsivity of 390.5 A/W,a specific detectivity of 5.10×10^(12)Jones,a photogain 1.04×10^(5),and a photoresponse rise and decay time of 400 and 430 ms(λ=900 nm,P=16.2μW/cm^(2)),respectively.It also shows a broadband wavelength response from 405 to 1,020 nm.This superior performance could be attributed to the strong near-infrared absorption and the type-II(staggered)band alignment which ensures efficient charge transfer from 2DPI to MoS_(2).The face-to-face spatial configuration of MoS_(2)–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface,electron and holes can be separated due to the large band offsets.This work presents a significant step for the manipulation of high-performance NIR photodetector of twodimensional covalent organic polymer-sensitized monolayer TMDCs.
