Metal chalcogenide solid solution,especially ZnCdS,has been intensively investigated in photocatalytic H_(2) generation due to their cost-effective synthetic procedure and adjustable band structures.In this work,we re...Metal chalcogenide solid solution,especially ZnCdS,has been intensively investigated in photocatalytic H_(2) generation due to their cost-effective synthetic procedure and adjustable band structures.In this work,we report on the defect engineering of ZnCdS with surface disorder layer by simple room temperature Li-ethylenediamine(Li-EDA)treatment.Experimental results confirm the formation of unusual Zn and S dual vacancies,where rich S vacancies(Vs)served as electron trapping sites,meanwhile Zn vacancies(Vzn)served as hole trapping sites.The refined structure significantly facilitates the photo charge carrier transfer and improves photocatalytic properties of ZnCdS.The disordered ZnCdS shows a highest photocatalytic H_(2) production rate of 33.6 mmol·g^(-1)·h^(-1) under visible light with superior photocatalytic stabilities,which is 7.3 times higher than pristine ZnCdS and 7 times of Pt(1 wt.%)loaded ZnCdS.展开更多
基金supported by National Natural Science Foundation of China(Nos.21902104 and 21701135)Natural Science Foundation of Top Talent of SZTU(Nos.2019205,2019108101003,and 20200201)+2 种基金Foundation for Young Innovative Talents in Higher Education of Guangdong(No.2018KQNCX401)the Shenzhen Science and Technology Research Project(No.JCYJ20180508152903208)the Open Project Program of Key Laboratory for Analytical Science of Food Safety and Biology,Ministry of Education(No.FS2004).
文摘Metal chalcogenide solid solution,especially ZnCdS,has been intensively investigated in photocatalytic H_(2) generation due to their cost-effective synthetic procedure and adjustable band structures.In this work,we report on the defect engineering of ZnCdS with surface disorder layer by simple room temperature Li-ethylenediamine(Li-EDA)treatment.Experimental results confirm the formation of unusual Zn and S dual vacancies,where rich S vacancies(Vs)served as electron trapping sites,meanwhile Zn vacancies(Vzn)served as hole trapping sites.The refined structure significantly facilitates the photo charge carrier transfer and improves photocatalytic properties of ZnCdS.The disordered ZnCdS shows a highest photocatalytic H_(2) production rate of 33.6 mmol·g^(-1)·h^(-1) under visible light with superior photocatalytic stabilities,which is 7.3 times higher than pristine ZnCdS and 7 times of Pt(1 wt.%)loaded ZnCdS.
