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Femtosecond laser fabrication of 3D vertically aligned micro-pore network on thick-film Li_(4)Ti_(5)O_(12)electrode for high-performance lithium storage
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作者 Quansheng Li Xiaofei Sun +4 位作者 Xuesong Mei Lingzhi Wang Minxing Yang jianlei cui Wenjun Wang 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2024年第8期250-262,I0006,共14页
The development of energy storage devices with high energy density relies heavily on thick film electrodes,but it is challenging due to the limited ion transport kinetics inherent in thick electrodes.Here,we report on... The development of energy storage devices with high energy density relies heavily on thick film electrodes,but it is challenging due to the limited ion transport kinetics inherent in thick electrodes.Here,we report on the preparation of a directional vertical array of micro-porous transport networks on LTO electrodes using a femtosecond laser processing strategy,enabling directional ion rapid transport and achieving good electrochemical performance in thick film electrodes.Various three-dimensional(3D)vertically aligned micro-pore networks are innovatively designed,and the structure,kinetics characteristics,and electrochemical performance of the prepared ion transport channels are analyzed and discussed by multiple characterization and testing methods.Furthermore,the rational mechanisms of electrode performance improvement are studied experimentally and simulated from two aspects of structural mechanics and transmission kinetics.The ion diffusion coefficient,rate performance at 60 C,and electrode interface area of the laser-optimized 60-15%micro-porous transport network electrodes increase by 25.2 times,2.2 times,and 2.15 times,respectively than those of untreated electrodes.Therefore,the preparation of 3D micro-porous transport networks by femtosecond laser on ultra-thick electrodes is a feasible way to develop high-energy batteries.In addition,the unique micro-porous transport network structure can be widely extended to design and explore other high-performance energy materials. 展开更多
关键词 Femtosecond laser Micro-porous transport networks Laser processing Thick film electrodes Ion transport kinetics
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Morphological characteristics and atomic evolution behavior of nanojoints in Ag nanowire interconnect network
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作者 jianlei cui Xiaoying Ren +5 位作者 Xuesong Mei Zhengjie Fan Chenchen Huang Zhijun Wang Xiaofei Sun Wenjun Wang 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2023年第2期254-264,共11页
Ag nanowires(AgNWs)have shown great application value in the field of flexible electronics due to their excellent optical and electrical properties,and the quality of its joints of AgNWs in the thin film network direc... Ag nanowires(AgNWs)have shown great application value in the field of flexible electronics due to their excellent optical and electrical properties,and the quality of its joints of AgNWs in the thin film network directly plays a key role in its performance.In order to further improve the joint quality of AgNWs under thermal excitation,the thermal welding process and atomic evolution behavior of AgNWs were investigated through a combination of in situ experimental and molecular dynamics simulations.The influence of processing time,temperature,and stress distribution due to spatial arrangement on nanojoints was systematically explored.What is more,the failure mechanisms and their atomic interface behavior of the nanojoints were also investigated. 展开更多
关键词 Ag nanowires NANOCONTACTS morphological characteristics atomic configuration MD simulation
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Carbon nanotube integrated circuit technology:purification,assembly and integration
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作者 jianlei cui Fengqi Wei Xuesong Mei 《International Journal of Extreme Manufacturing》 SCIE EI CAS 2024年第3期120-138,共19页
As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning ... As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions. 展开更多
关键词 carbon nanotubes integrated circuits field-effect transistors post-Moore
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