N-methyl-D-aspartate receptor subunit expression in memory-related brain areas of lead-exposed rats

Lead exposure induces decreased hippocampal N-methyI-D-aspartic acid （NMDA） receptor gene and protein expressions, which influences the molecular mechanisms of learning and memory. However, lead poisoning-induced differences in NMDA subunit expression, and the correlation of lead poisoning with learning and memory, remain poorly understood. The present study measured differences in expression of NMDA receptor subunits NR1, NR2A, and NR2B in memory-related brain regions of rats who underwent different doses of lead exposure. Results demonstrated decreased NR1, NR2A, and NR2B subunit expressions in some memory-related brain areas. The inhibitory effect of 4.8 mmol/L lead exposure on hippocampal NR2B was most significant, although NR2A expression also significantly decreased following 14.4 mmol/L lead exposure. There was no difference in NR1 expression following exposure to 〈 4.8 mmol/L lead, although the inhibitory effect of 19.6 mmol/L lead exposure was strongest for NR1 expression in the hippocampus. Inhibitory avoidance test results revealed that greater concentrations of lead exposure resulted in decreased learning and memory. Therefore, lead toxicity was dependent on NMDA receptor subunit composition, and NR1, NR2A, and NR2B expressions were associated with time and concentration of lead exposure.

Clinical guidelines for indications,techniques,and complications of autogenous bone grafting

Autogenous bone grafts have long been considered the“gold standard”and most effective material in bone regeneration procedures.[1]Autogenous bone grafts are used to repair bone defects caused by nonunion,infection,tumor resection,and spinal and joint fusion.[2]It has been reported that more than 200,000 autologous bone grafts are performed in the United States each year.[3]Although there are no specific statistics on the annual number of bone grafts performed in China,autologous bone grafting is the most common surgical technique in orthopedics.The iliac crest remains the most common donor site,along with the fibula,ribs,tibial metaphysis,proximal humerus,distal radius,and greater trochanter.[4,5]Various bone-graft options provide different amounts and qualities of cortical,cancellous,and corticocancellous bone.[6,7]Autogenous bone graft is osteogenic,histocompatible,provides structural support.

A non-fluorinated liquid-like membrane with excellent anti-scaling performance for membrane distillation

Membrane distillation(MD)has gained extensive attention for treating highly saline wastewater.However,membrane scaling during the MD process has hindered the rapid development of this technology.Current approaches to mitigate scaling in membrane distillation focus primarily on achieving enhanced hydrophobicity and even superhydrophobicity via utilizing fluorinated fibrous membrane or introducing perfluorosilane modification.Considering the environmental hazards posed by fluorinated compounds,it is highly desirable to develop non-fluorinated membranes with enhanced anti-scaling properties for effective membrane distillation.In this study,we present a non-fluorinated liquid-like MD membrane with exceptional anti-scaling performance.This membrane was facilely fabricated by grafting linear polydimethylsiloxane(LPDMS)onto a hydrophilic polyether sulfone(PES)membrane pre-coated with the intermediate layers of polydopamine and silica(denoted as LPDMS-PES).Remarkably,LPDMS-PES manifested a drastically improved scaling resistance in continuous MD tests than its perfluorinated counterpart,i.e.,1H,1H,2H,2H-perfluorooctyltrichlorosilane-modified PES membrane(PFOS-PES),in both heterogeneous nucleation-dominated and crystal deposition-dominated scaling processes,despite the latter having a smaller surface energy.LPDMS-PES demonstrated a reduction of crystal accumulation of approximately 85%for Na Cl and 73%for Ca SO_(4) in the heterogeneous nucleation-dominated scaling process compared to PFOS-PES.Additionally,in the crystal deposition-dominated scaling process LPDMS-PES exhibited a reduction of about 70%in scale accumulation.These results explicitly evidenced the great potential of the liquid-like membrane to minimize scaling in membrane distillation by inhibiting both scale nucleation and adhesion onto the membrane.We believe the findings of this study have important implications for the design of high-performance MD membranes,particularly in the quest for environmentally sustainable alternatives to perfluorinated materials.

Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(NMOS) inverters

It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed displays.Here,a self-confined inkjet printing technology has been developed to construct large-area(64×64 array),high-resolution and high-performance metal oxide bilayer(In_(2)O_(3)/IGZO)heterojunction TFTs with independent bottom gates on transparent glass substrates.Inkjet printing In_(2)O_(3) dot arrays with the diameters from 55 to 70μm and the thickness of~10 nm were firstly deposited on UV/ozone treated AlO_(x) dielectric layers,and then IGZO dots were selectively printed on the top of In_(2)O_(3) dots by self-confined technology to form In_(2)O_(3)/IGZO heterojunction channels.When the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films,the mobility of the resulting printed In_(2)O_(3)/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm^(2) V^(-1) s^(-1) with excellent on/off ratios(>10^(8))and negligible hysteresis.Furthermore,the printed N-Metal-Oxide-Semiconductor(NMOS)inverter consisted of an In_(2)O_(3)/IGZO TFT and an IGZO TFT has been demonstrated,which show excellent performance with the voltage gain up to 112.The strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates,circuits and display driving circuits.

Printed thin film transistors with 10^(8)on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched(9,8)carbon nanotubes

Monochiral single-walled carbon nanotubes(SWCNTs)can enable high-performance carbon-based electronic devices and integrated circuits.However,their fabrication often requires complex SWCNT purification and enrichment.Herein,we showed that isoindigo-based polymer derivatives(PDPPIID and PFIID)directly enriched(9,8)nanotubes from as-synthesized SWCNT powders selectively and efficiently to yield high concentration(9,8)nanotube inks.The selective wrapping mechanism was elucidated by classical full-atomistic molecular dynamic(MD)simulations.Thin-film transistors(TFTs)were fabricated by depositing the SWCNT ink into device channels using aerosol jet printing.TFT performance was strongly influenced by polymer residues,the deposition condition(humidity),and ink concentration.Optimized TFTs showed excellent device-to-device uniformity with 108 on/off ratios.Further,optoelectronic transistors were fabricated,and their photoelectrical neuromorphic characteristics,storage,memory,and logic functions were characterized under the pulsed light and voltage stimulations,demonstrating excellent application potentials.

Research on automatic spraying of single-walled carbon nanotubes and detection of spraying effects

Single-walled carbon nanotubes(SWNTs)have been introduced as compliant electrodes for dielectric elastomers(DEs)due to fault tolerance.To acquire a better electrostrictive strain and longer lifetime,it is essential to obtain a certain and uniform width of the SWNT electrode.To ensure uniform width manually,a small flux and longer time are necessary.Moreover,it is difficult to control the width of the electrode for the randomness of manual spraying.Therefore,a new type of automatic spraying process is presented in this paper.The width and homogeneity of the electrode can be easily controlled by certain parameters of the process.Two methods for detecting the homogeneity of the electrode are introduced in this paper:Measurement of surface resistance and luminosity.The coefficient of variation(CV)values detected by the two methods are virtually equal and less than 8%,which shows the feasibility of the detection method and homogeneity of automatic spraying.The speed of automatic spraying is 102 mm^(2)/s,which is higher than that of manual spraying.The spraying process and the method used to detect homogeneity in this paper provide a reference for the relevant processes.