中国科大蒙城流星雷达观测中间层-低热层大气风场和潮汐研究

中国科学技术大学蒙城流星雷达(33.4°N,116.5°E)自2014年4月运行以来,已经持续观测超过了8 a。本文报道了该流星雷达8 a的水平风场和大气潮汐波动观测结果。另外,给出了该流星雷达观测和Navy Global Environmental Model-High Altitude(NAVGEM-HA)模拟的对比结果。观测结果表明在北半球较低中纬度地区,流星雷达观测的流星数量存在明显的周日变化,流星数量在当地时间的上午增多,在午后和夜晚降低。同时流星数量也存在明显的周年变化,在9和10月份出现大值,在2月份出现低值。此外,北半球较低中纬度地区中间层-低热层大气水平风场存在明显的周年变化,在84 km以上,纬向水平风场在夏季表现为东向风场,冬季表现为西向风场;而在84 km以下,冬季为东向风场,春季为西向风场。经向风场则表现出冬季为北向风场,夏季为南向风场。此外,大气风场存在明显的太阳热力潮汐波动,主要表现为周日潮汐,半日潮汐次之。其中纬向和经向周日潮汐均在春季3月份出现了最大值,振幅分别可达到40和30 m/s,而在秋季9月份出现较大值,振幅分别可达到30和25 m/s。周日潮汐振幅基本表现为在春秋分日附近出现增强,在冬夏至日附近出现减弱的特征。半日潮汐主要在90 km高度以上出现明显增强,而在季节变化特征上,在春季(4月)和秋季(9月)出现明显的增强。

Quasi-6-day waves in the mesosphere and lower thermosphere region and their possible coupling with the QBO and solar 27-day rotation

By using atmospheric wind data in the mesopause and lower thermosphere(MLT)region,features of seasonal variations in the quasi-6-day wave(6DW)at different latitudes are analyzed,and modulation of the 6DW by the diurnal tide and solar 27-day period is discussed.The data used in the analysis are extracted from a wind dataset collected by a meteor radar chain from December 2008 to November 2017.The meteor radar chain includes four stations,in Mohe,Beijing,Wuhan,and Sanya.Features of seasonal variations in the 6DW indicate that in summer the 6DW is usually strongest during July and August,followed by stronger variations in January and April.At certain altitudes over Wuhan and Sanya,the 6DW is slightly different in different years and altitudes.In our analysis of seasonal variations in the 6DW,we find that it is generally affected by annual oscillations and semiannual oscillations.The annual oscillations of the 6DW in the mid-low latitudes are modulated by the quasibiennial oscillation in the diurnal tide,resulting in seasonal features that are different from those at other latitudes.In addition,the 6DW amplitude at mid-high latitudes has a significant 27-day solar rotation variation,which was prominent in 2016.

Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.

Splitting light beam by meanderline with continuous phase profile

It has been successfully demonstrated can be widely used in nano-photonics applications owing to their flexible wavefront manipulation in a limited physical profile.However,how to improve the efficiency for the transmission light is still a challenge.We experimentally demonstrate that the sine-shaped metallic meanderline fabricated by focus ion beam technology converts circularly polarized(CP)light to its opposite handedness and sends them into different propagation directions depending on the polarization states in near-infrared and visible frequency regions.The beam splitting behavior is well characterized by a simple geometry relation,following the rule concluded from other works on the wavefront manipulation of metasurface with phase discontinuity.Importantly,the meanderline is demonstrated to be more efficient in realizing the same functions due to the suppressed high order diffractions resulted from the absence of interruption in phase profile.The theoretical efficiency reaches 67%.Particularly,potential improvements are feasible by changing or optimizing shape of the meanderline,offering high flexibility in applications for optical imaging,communications and other phase-relative techniques.Additionally,since the continuous phase provided by the meanderline can improve the sampling efficiency of the phase function,it is helpful in realizing high quality hologram.

Air-coupled piezoelectric micromachined ultrasonic transducers for surface stain detection and imaging

This paper proposes an air-coupled piezoelectric micromachined ultrasonic transducer(PMUT)for detection and imaging of surface stains.A 508 kHz PMUT array is designed,fabricated,and characterized in terms of its electrical and acoustic properties,and it is used in a pulse echo validation test.Imaging of stains on metal blocks is successfully demonstrated.Compared with existing optical methods for stain detection,the proposed approach can work in a dark environment without color requirements.This work provides a new and promising route for the development of miniaturized stain detection systems.

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

An interlayer is usually employed to tackle the interfacial instability issue between solid electrolytes(SEs)and Li metal caused by the side reaction.However,the failure mechanism of the ionic conductor interlayers,especially the influence from electron penetration,remains largely unknown.Herein,using Li1.3Al0.3Ti1.7(PO4)3(LATP)as the model SE and LiF as the interlayer,we use metal semiconductor contact barrier theory to reveal the failure origin of Li/LiF@LATP interface based on the calculation results of density functional theory(DFT),in which electrons can easily tunnel through the LiF grain boundary with F vacancies due to its narrow barrier width against electron injection,followed by the reduction of LATP.Remarkably,an Al-LiF bilayer between Li/LATP is found to dramatically promote the interfacial stability,due to the highly increased barrier width and homogenized electric field at the interface.Consequently,the Li symmetric cells with Al-LiF bilayer can exhibit excellent cyclability of more than 2,000 h superior to that interlayered by LiF monolayer(~860 h).Moreover,the Li/Al-LiF@LATP/LiFePO4 solid-state batteries deliver a capacity retention of 83.2%after 350 cycles at 0.5 C.Our findings emphasize the importance of tuning the electron transport behavior by optimizing the potential barrier for the interface design in high-performance solid-state batteries.

具有室温铁磁性和高空穴迁移率的锰掺杂硅锗薄膜

本文采用超高真空化学气相沉积系统在锗衬底上外延生长了第IV族硅锗薄膜,然后通过离子注入和快速热退火进行锰元素掺杂.结构测试表明,外延的硅锗薄膜是具有均匀拉伸应变的单晶,随后的离子注入和快速热退火使其变为多晶.磁性测试表明,退火后的薄膜表现出依赖于锰掺杂浓度的铁磁性,居里温度最高可达309 K;X射线磁圆二色谱揭示了替代位锰元素的自旋和轨道磁矩.为最大限度地减少反常霍尔效应的影响,磁输运测试在高达31 T的强磁场下进行,该薄膜在300 K温度下空穴迁移率达到创纪录的~1230 cm^(2)V_(−1)s^(−1).此高迁移率归因于样品较高的结晶质量和拉伸应变对能带的调制.本文首次展示了具有室温铁磁性和高载流子迁移率的锰掺杂硅锗薄膜,有望促进基于第IV族半导体的自旋电子材料与器件的实际应用.

Competitive Nucleation and Rapid Growth of Co-Si Intermetallic Compounds during Eutectic Solidification under Containerless Processing Condition

The liquid-solid transitions of （Co2Si＋CoSi） and （CoSi＋CoSi2） eutectic alloys were realized in drop tube and the rapid eutectic growth mechanism of intermetallic compounds was examined. The experimental and calculated results indicate that with increasing Co content, the intermetallic compound prefers nucleating primarily. The eutectic microstructures experience the transitions of ＇lamellar-anomalous-divorced＇ eutectic with undercooling. In undercooled state, the growth of CoSi intermetallic compound always lags behind others, and no matter how large the undercooling is, this intermetallic compound grows under the solutal diffusion control The calculated coupled zone demonstrates that （Co2Si＋CoSi） eutectic can form within certain undercooling regime, when the composition is in the range from 23.6% to 25.4% Si. And the calculated coupled zone of （CoSi＋CoSi2） covers a composition range from 40.8% to 43.8% Si.

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

An amorphous Ge（a-Ge） intermediate layer is introduced into the Si bonded interface to lower the annealing temperature and achieve good electrical characteristics. The interface and electrical characteristics of nSi/n-Si and p-Si/n-Si junctions manufactured by low-temperature wafer bonding based on a thin amorphous Ge are investigated. It is found that the bubble density tremendously decreases when the a-Ge film is not immersed in DI water. This is due to the decrease of the –OH groups. In addition, when the samples are annealed at 400 °C for20 h, the bubbles totally disappear. This can be explained by the appearance of the polycrystalline Ge（absorption of H;） at the bonded interface. The junction resistance of the n-Si/n-Si bonded wafers decreases with the increase of the annealing temperature. This is consistent with the recrystallization of the a-Ge when high-temperature annealing is conducted. The carrier transport of the Si-based PN junction annealed at 350 °C is consistent with the trap-assisted tunneling model and that annealed at 400 °C is related to the carrier recombination model.

MEMS ultrasonic transducers for safe,low-power and portable eye-blinking monitoring

Eye blinking is closely related to human physiology and psychology.It is an effective method of communication among people and can be used in human-machine interactions.Existing blink monitoring methods include videooculography,electro-oculograms and infrared oculography.However,these methods suffer from uncomfortable use,safety risks,limited reliability in strong light or dark environments,and infringed informational security.In this paper,we propose an ultrasound-based portable approach for eye-blinking activity monitoring.Low-power pulse-echo ultrasound featuring biosafety is transmitted and received by microelectromechanical system(MEMS)ultrasonic transducers seamlessly integrated on glasses.The size,weight and power consumption of the transducers are 2.5 mm by 2.5 mm,23.3 mg and 71μW,respectively,which provides better portability than conventional methods using wearable devices.Eye-blinking activities were characterized by open and closed eye states and validated by experiments on dfferent volunteers.Finally,real-time eye-blinking monitoring was successfully demonstrated with a response time less than 1 ms.The proposed solution paves the way for ultrasound-based wearable eye-blinking monitoring and offers miniaturization,light weight,low power consumption,high informational security and biosafety.

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.