Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handl...Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO(In_(2)O_(3):Sn) interfacial properties. Based on Sn^(4+)/DMSO(dimethyl sulfoxide) solution system, a totalarea efficiency of 12.87% with a VOC of 529 m V has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the Cd S film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/Cd S/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.展开更多
Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeS...Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeSe_(3)(A=Li,Na)with large optical anisotropy were rationally designed by a rigid octahedron and flexible dimer combined strategy and fabricated in experiment.The introduction of rigid[LiSe_(6)]/[NaSe_(6)]and[MgSe_(6)]octahedra effectively regulates the geometry and arrangement of the flexible[Ge2Se6]dimers,resulting in the birefringence as large as 0.334@1,064 nm in LiMgGeSe_(3) and 0.445@1,064 nm(the largest one in the reported[Ge_(2)Se_(6)]dimer-contained selenides)in NaMgGeSe_(3).Density functional theory(DFT)calculations and statistical analyses highlight the influence of polarizability anisotropy,density,arrangement of units,as well as layer distance on birefringence.The results indicate that AMgGeSe_(3)(A=Li,Na)crystals are the promising IR birefringent materials and it gives an insight into the exploration of new IR birefringent materials with large birefringence based on the clamping effect from rigid groups.展开更多
We consider a class of modified quasilinear Schrodinger equations-△u+k/2u△u^(2)=λα(x)u^(-α)+b(x)u^(β) in Ω with u(x)=0 on■Ω,where Ω■R^(N)is a bounded domain with a regular boundary,N≥3,a and b are bounded ...We consider a class of modified quasilinear Schrodinger equations-△u+k/2u△u^(2)=λα(x)u^(-α)+b(x)u^(β) in Ω with u(x)=0 on■Ω,where Ω■R^(N)is a bounded domain with a regular boundary,N≥3,a and b are bounded mensurable functions,0<α<1<β<2*-1 and k,λ≥0 are two parameters.We establish the global existence and multiplicity results of positive solutions in H^(1)_(0)(Ω)∩L^(∞)(Ω)for appropriate classes of parameters k andλand coefficients a(x)and b(x).展开更多
基金supported by the National Natural Science Foundation of China(U2002216,52172261,51627803,51972332,22075150,and U1902218)the National Key Research and Development Program of China(2019YFE0118100)。
文摘Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO(In_(2)O_(3):Sn) interfacial properties. Based on Sn^(4+)/DMSO(dimethyl sulfoxide) solution system, a totalarea efficiency of 12.87% with a VOC of 529 m V has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the Cd S film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/Cd S/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
基金supported by the High-level Talent Project of Xinjiang Uygur Autonomous Region(2020000039)the National Natural Science Foundation of China(52002398,61835014,51972336)the Xinjiang Key Laboratory of Electronic Information Materials and Devices(2017D04029)。
文摘Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeSe_(3)(A=Li,Na)with large optical anisotropy were rationally designed by a rigid octahedron and flexible dimer combined strategy and fabricated in experiment.The introduction of rigid[LiSe_(6)]/[NaSe_(6)]and[MgSe_(6)]octahedra effectively regulates the geometry and arrangement of the flexible[Ge2Se6]dimers,resulting in the birefringence as large as 0.334@1,064 nm in LiMgGeSe_(3) and 0.445@1,064 nm(the largest one in the reported[Ge_(2)Se_(6)]dimer-contained selenides)in NaMgGeSe_(3).Density functional theory(DFT)calculations and statistical analyses highlight the influence of polarizability anisotropy,density,arrangement of units,as well as layer distance on birefringence.The results indicate that AMgGeSe_(3)(A=Li,Na)crystals are the promising IR birefringent materials and it gives an insight into the exploration of new IR birefringent materials with large birefringence based on the clamping effect from rigid groups.
基金supported by Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq/Brazil) (Grant No.311562/2020-5)supported by National Natural Science Foundation of China (Grant Nos.11971436 and 12011530199)+1 种基金Natural Science Foundation of Zhejiang (Grant Nos.LZ22A010001 and LD19A010001)supported by Coordenacao de Aperfei coamento de Pessoal de Nível Superior (CAPES/Brazil) (Grant No.2788/2015-02)。
文摘We consider a class of modified quasilinear Schrodinger equations-△u+k/2u△u^(2)=λα(x)u^(-α)+b(x)u^(β) in Ω with u(x)=0 on■Ω,where Ω■R^(N)is a bounded domain with a regular boundary,N≥3,a and b are bounded mensurable functions,0<α<1<β<2*-1 and k,λ≥0 are two parameters.We establish the global existence and multiplicity results of positive solutions in H^(1)_(0)(Ω)∩L^(∞)(Ω)for appropriate classes of parameters k andλand coefficients a(x)and b(x).
