The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O...The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O_(2)-based ferroelectric random access memory.The influence of imprint on the retention and endurance is demonstrated.Furthermore,a solution in circuity is pro-posed to effectively solve the misreading problem caused by imprint.展开更多
基金This research was supported by the National Key R&D Program of China(Grant No.2022YFB3606900)in part by the National Natural Science of China(Grant No.62004217).
文摘The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O_(2)-based ferroelectric random access memory.The influence of imprint on the retention and endurance is demonstrated.Furthermore,a solution in circuity is pro-posed to effectively solve the misreading problem caused by imprint.
