Malus-metasurface-assisted polarization multiplexing

Polarization optics plays a pivotal role in diffractive,refractive,and emerging flat optics,and has been widely employed in contemporary optical industries and daily life.Advanced polarization manipulation leads to robust control of the polarization direction of light.Nevertheless,polarization control has been studied largely independent of the phase or intensity of light.Here,we propose and experimentally validate a Malus-metasurface-assisted paradigm to enable simultaneous and independent control of the intensity and phase properties of light simply by polarization modulation.The orientation degeneracy of the classical Malus’s law implies a new degree of freedom and enables us to establish a one-to-many mapping strategy for designing anisotropic plasmonic nanostructures to engineer the Pancharatnam–Berry phase profile,while keeping the continuous intensity modulation unchanged.The proposed Malus metadevice can thus generate a near-field greyscale pattern,and project an independent far-field holographic image using an ultrathin and single-sized metasurface.This concept opens up distinct dimensions for conventional polarization optics,which allows one to merge the functionality of phase manipulation into an amplitudemanipulation-assisted optical component to form a multifunctional nano-optical device without increasing the complexity of the nanostructures.It can empower advanced applications in information multiplexing and encryption,anti-counterfeiting,dual-channel display for virtual/augmented reality,and many other related fields.

Controllable defects implantation in MoS2 grown by chemical vapor deposition for photoluminescence enhancement

Photoluminescence （PL） of transition metal dichalcogenides （TMDs） can be engineered by controlling the density of defects, which provide active sites for electron-hole recombination, either radiatively or non-radiatively. However, the implantation of defects by external stimulation, such as uniaxial tension and irradiation, tends to introduce local damages or structural non-homogeneity, which greatly degrades their luminescence properties and impede their applicability in constructing optoelectronic devices. In this paper, we present a strategy to introduce a controllable level of defects into the MoS2 monolayers by adding a hydrogen flow during the chemical vapor deposition, without sacrificing their luminescence characteristics. The density of the defect is controlled directly by the concentration of hydrogen. For an appropriate hydrogen flux, the monolayer MoS2 sheets have three times stronger PL emission at the excitonic transitions, compared with those samples with nearly perfect crystalline structure. The defect-bounded exciton transitions at lower energies arising in the defective samples and are maximized when the total PL is the strongest. However, the B exciton, exhibits a monotonic decline as the defect density increases. The Raman spectra of the defective MoS2 reveal a redshift （blueshift） of the in-plane （out-of-plane） vibration modes as the hydrogen flux increases. All the evidence indicates that the generated defects are in the form of sulfur vacancies. This study renders the high-throughput synthesis of defective MoS2 possible for catalysis or light emitting applications.