A solution-processed CuOx film has been successfully integrated as the hole-transporting layer（HTL） for inverted planar heterojunction perovskite solar cells（PVSCs）. The CuOx layer is fabricated by simply spin-coa...A solution-processed CuOx film has been successfully integrated as the hole-transporting layer（HTL） for inverted planar heterojunction perovskite solar cells（PVSCs）. The CuOx layer is fabricated by simply spin-coating a copper acetylacetonate（Cu（acac）2） chloroform solution onto ITO glass with high transparency in the visible range. The compact and pinhole-free perovskite film with large grain domains is grown on the CuOx film. The inverted PVSCs with the structure of ITO/CuOx/MAPbI3/PC（61）BM/ZnO/Al are fabricated and show a best PCE of 17.43% under standard AM 1.5G simulated solar irradiation with a VOCof 1.03 V, aJ（SC） of 22.42 mA cm^（-2）, and a fill factor of 0.76, which is significantly higher and more stable than that fabricated from the often used hole-transporting material PEDOT：PSS（11.98%） under the same experimental conditions. The enhanced performance is attributed to the efficient hole extraction through the CuOx layer as well as the high-quality CH3NH3PbI3 films grown on the CuOx. Our results indicate that low-cost and solution-processed CuOx film is a promising HTL for high performance PVSCs with better stability.展开更多
基金supported by the Major State Basic Research Development Program (No. 2014CB643503)the National Science Foundation for Post-doctoral Scientists of China (No. 2015M580512)partly supported by the program for Innovative Research Team in University of Ministry of Education of China (No. IRT13R54)
文摘A solution-processed CuOx film has been successfully integrated as the hole-transporting layer（HTL） for inverted planar heterojunction perovskite solar cells（PVSCs）. The CuOx layer is fabricated by simply spin-coating a copper acetylacetonate（Cu（acac）2） chloroform solution onto ITO glass with high transparency in the visible range. The compact and pinhole-free perovskite film with large grain domains is grown on the CuOx film. The inverted PVSCs with the structure of ITO/CuOx/MAPbI3/PC（61）BM/ZnO/Al are fabricated and show a best PCE of 17.43% under standard AM 1.5G simulated solar irradiation with a VOCof 1.03 V, aJ（SC） of 22.42 mA cm^（-2）, and a fill factor of 0.76, which is significantly higher and more stable than that fabricated from the often used hole-transporting material PEDOT：PSS（11.98%） under the same experimental conditions. The enhanced performance is attributed to the efficient hole extraction through the CuOx layer as well as the high-quality CH3NH3PbI3 films grown on the CuOx. Our results indicate that low-cost and solution-processed CuOx film is a promising HTL for high performance PVSCs with better stability.
