The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amor- phous ZrO2 films were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better...The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amor- phous ZrO2 films were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switch- ing cycles and narrow distribution of OFF state resistance （Roff）. The switching mechanism in the Pt/ZrO2/ Pt structure can be attributed to the formation and rupture of oxygen vacancy filaments; while in the Cu/ZrO2/Pt structure, there exist both oxygen vacancy filaments and Cu filaments. The formation of Cu filaments is related to the redox reaction of Cu electrode under the applied voltage. The inhomoge- neous dispersive injection of Cu ions results in the dispersive Ro~ and significant decrease of operate voltage, Schematic diagrams of the formation of conductive filaments and the failure mechanism in the Cu/ZrO2/ Pt structures are also proposed.展开更多
基金the support of all the technicians at Henan Normal University and Henan Universitysupported by Zhongyuan Scholar of Henan Province(224000510007)+2 种基金the National Natural Science Foundation of China(11974103)for fundingthe financial support from the AXA research fundthe funding from Henan Province College Youth Backbone Teacher Project(2020GGJS062)。
基金supported by the National Natural Science Foundation of China(Nos.51202107 and 50932001)the Opening Funding of National Laboratory of Solid State Microstructure(No.M26017)+1 种基金the Doctoral Scientific Research Foundation of Henan Normal University(No.5101029170260)the support of PAPD in Jiangsu Province and Doctoral Fund of Ministry of Education of the People’s Republic of China(No.20120091110049)
文摘The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amor- phous ZrO2 films were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switch- ing cycles and narrow distribution of OFF state resistance （Roff）. The switching mechanism in the Pt/ZrO2/ Pt structure can be attributed to the formation and rupture of oxygen vacancy filaments; while in the Cu/ZrO2/Pt structure, there exist both oxygen vacancy filaments and Cu filaments. The formation of Cu filaments is related to the redox reaction of Cu electrode under the applied voltage. The inhomoge- neous dispersive injection of Cu ions results in the dispersive Ro~ and significant decrease of operate voltage, Schematic diagrams of the formation of conductive filaments and the failure mechanism in the Cu/ZrO2/ Pt structures are also proposed.
