Recently,solution-processed quantum dot lightemitting diodes(QLEDs)have emerged as a promising candidate for next-generation lighting and display devices.However,when given a constant voltage or current,the QLEDs need...Recently,solution-processed quantum dot lightemitting diodes(QLEDs)have emerged as a promising candidate for next-generation lighting and display devices.However,when given a constant voltage or current,the QLEDs need a certain working time to reach their maximum brightness.Such positive aging challenge,dramatically reducing the response speed of the device and causing a luminescence delay,is urgent to be investigated and resolved.In the current work,we introduce a charge-storage layer architecture by inserting copper(I)thiocyanate(CuSCN)between the organic holeinjection layer and hole-transport layer.The extracted holes will be released during the next electrical signal stimulation to increase the efficiency of charge transport.As a result,the response speed of the QLEDs is improved by an order of magnitude.In addition,by inserting an inorganic CuSCN layer,the efficiency,lifetime,and environmental stability of red/green/blue full-color QLEDs are enhanced simultaneously.Moreover,this work provides a generic strategy for the fabrication of fast-response and high-efficiency full-color QLEDs without luminescence delay,which plays a critical role in the practical industrialization of QLEDs.展开更多
基金financially supported by the National Natural Science Foundation of China(62075043)Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ126)。
文摘Recently,solution-processed quantum dot lightemitting diodes(QLEDs)have emerged as a promising candidate for next-generation lighting and display devices.However,when given a constant voltage or current,the QLEDs need a certain working time to reach their maximum brightness.Such positive aging challenge,dramatically reducing the response speed of the device and causing a luminescence delay,is urgent to be investigated and resolved.In the current work,we introduce a charge-storage layer architecture by inserting copper(I)thiocyanate(CuSCN)between the organic holeinjection layer and hole-transport layer.The extracted holes will be released during the next electrical signal stimulation to increase the efficiency of charge transport.As a result,the response speed of the QLEDs is improved by an order of magnitude.In addition,by inserting an inorganic CuSCN layer,the efficiency,lifetime,and environmental stability of red/green/blue full-color QLEDs are enhanced simultaneously.Moreover,this work provides a generic strategy for the fabrication of fast-response and high-efficiency full-color QLEDs without luminescence delay,which plays a critical role in the practical industrialization of QLEDs.
