In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida...In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos. 60406004, 60890193, and 60736033)the National Key Micrometer/Nanometer Processing Laboratory
文摘In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.
