We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of...We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61888102)the National Natural Science Foundation of China(Grant No.12004417)+5 种基金the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant No.U2032206)Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061)Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000)Youth Innovation Promotion Association of CAS(Grant No.Y201902)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。
文摘We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.
