Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, st...Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.展开更多
Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical...Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.展开更多
基金financially supported by the National Basic Research Program of China(No.2011CBA00600)the National Natural Science Foundation of China(No.61275025)
文摘Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.
基金financially supported by the National Basic Research Program of China (No.2011CBA00600)the National Natural Science Foundation of China (No.61275025)
文摘Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.
