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Black phosphorus-based field effect transistor devices for Ag ions detection 被引量:4
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作者 Hui-De Wang David K Sanf +5 位作者 Zhi-Nan Guo Rui Cao jin-lai zhao Muhammad Najeeb Ullah Shah Tao-Jian Fan Dian-Yuan Fanl Han Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期35-41,共7页
Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelec- tronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive i... Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelec- tronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10 l0 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in wimessed inspections field of food. 展开更多
关键词 black phosphorus semiconductor devices chemical sensing witnessed inspections
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