Two-dimensional honeycomb lattices show great potential in the realization of Dirac nodal line fermions(DNLFs).Here,we successfully synthesized a gold telluride(AuTe)monolayer by direct tellurizing an Au(111)substrate...Two-dimensional honeycomb lattices show great potential in the realization of Dirac nodal line fermions(DNLFs).Here,we successfully synthesized a gold telluride(AuTe)monolayer by direct tellurizing an Au(111)substrate.Low energy electron diffraction measurements reveal that it is(2×2)AuTe layer stacked onto(3×3)Au(111)substrate.Moreover,scanning tunneling microscopy images show that the AuTe layer has a honeycomb structure.Scanning transmission electron microscopy reveals that it is a single-atom layer.In addition,first-principles calculations demonstrate that the honeycomb AuTe monolayer exhibits Dirac nodal line features protected by mirror symmetry,which is validated by angle-resolved photoemission spectra.Our results establish that monolayer AuTe can be a good candidate to investigate 2D DNLFs and provides opportunities to realize high-speed low-dissipation devices.展开更多
Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D...Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric.Here we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with InSe as channel material,hBN as dielectric,and graphite as gate.The fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric.Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained.Taking advantages of the mechanical flexibility of these materials,we integrated the heterostructured InSe FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.展开更多
基金Project supported by the National Key R&D Program of China (Grant No.2018YFA0305800)the National Natural Science Foundation of China (Grant Nos.61925111,61888102,and 52102193)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB30000000)CAS Project for Young Scientists in Basic Research (Grant No.YSBR-003)the Fundamental Research Funds for the Central Universities。
文摘Two-dimensional honeycomb lattices show great potential in the realization of Dirac nodal line fermions(DNLFs).Here,we successfully synthesized a gold telluride(AuTe)monolayer by direct tellurizing an Au(111)substrate.Low energy electron diffraction measurements reveal that it is(2×2)AuTe layer stacked onto(3×3)Au(111)substrate.Moreover,scanning tunneling microscopy images show that the AuTe layer has a honeycomb structure.Scanning transmission electron microscopy reveals that it is a single-atom layer.In addition,first-principles calculations demonstrate that the honeycomb AuTe monolayer exhibits Dirac nodal line features protected by mirror symmetry,which is validated by angle-resolved photoemission spectra.Our results establish that monolayer AuTe can be a good candidate to investigate 2D DNLFs and provides opportunities to realize high-speed low-dissipation devices.
基金This work was supported by the National Key Basic Research Program of China(2021YFA0718700,2017YFA0302900,2017YFA0303003,2018YFB0704102,and 2018YFA0305800)the National Natural Science Foundation of China(11888101,11927808,11834016,11961141008,12174428,and 12274439)+4 种基金the Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDB25000000,XDB33000000)CAS Interdisciplinary Innovation Team,Beijing Natural Science Foundation(Z190008)CAS through the Youth Innovation Promotion Association(2022YSBR-048)Key-Area Research and Development Program of Guangdong Province(2020B0101340002)the Center for Materials Genome.
基金supported by grants from the National Natural Science Foundation of China(61888102,52022105,51771224,11888101,12061131005,and 11834016)the National Key Research and Development Projects of China(2018YFA0305800 and 2019YFA0308500)+6 种基金the Chinese Academy of Sciences(XDB33030100,XDB28010200,and XDB30010000)the Key Research Program of Chinese Academy of Sciences(ZDBS-SSWWHC001)the CAS Project for Young Scientists in Basic Research(YSBR-003)the Beijing Outstanding Young Scientist Program(BJJWZYJH01201914430039)supported by the US DOE,Basic Energy Sciences Grant(DE-FG02-99ER45747)the financial support by the European Research Council(ERC Consolidator Grant,No.815869)the Israel Science Foundation(ISF No.1251/19)。
基金Acknowledgements This work was supported by the National Key Research&Development Projects of China(Nos.2016YFA0202300,2018FYA0305800)National Natural Science Foundation of China(Nos.61674170,61888102)+2 种基金K.C.Wong Education Foundation,Strategic Priority Research Program of Chinese Academy of Sciences(Nos.XDB30000000,XDB28000000)Youth Innovation Promotion Association of CAS(No.20150005)the CAS Pioneer Hundred Talents Program.A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.The authors gratefully acknowledge Haifang Yang,Junjie Li,and Changzi Gu for help in device fabrication,and Yu-Yang Zhang and Shixuan Du for helpful discussions.
文摘Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric.Here we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with InSe as channel material,hBN as dielectric,and graphite as gate.The fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric.Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained.Taking advantages of the mechanical flexibility of these materials,we integrated the heterostructured InSe FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.
