The electronic structures and magnetic properties of diverse transition metal (TM=Fe, Co, and Ni) and nitrogen (N) co-doped monolayer MoS2 are investigated by using density functional theory. The results show that the...The electronic structures and magnetic properties of diverse transition metal (TM=Fe, Co, and Ni) and nitrogen (N) co-doped monolayer MoS2 are investigated by using density functional theory. The results show that the intrinsic MoS2 does not have magnetism initially, but doped with TM (TM=Fe, Co, and Ni) the MoS2 possesses an obvious magnetism distinctly. The magnetic moment mainly comes from unpaired Mo:4d orbitals and the d orbitals of the dopants, as well as the S:3p states. However, the doping system exhibits certain half-metallic properties, so we select N atoms in the V family as a dopant to adjust its half-metal characteristics. The results show that the (Fe, N) co-doped MoS2 can be a satisfactory material for applications in spintronic devices. On this basis, the most stable geometry of the (2Fe-N) co-doped MoS2 system is determined by considering the different configurations of the positions of the two Fe atoms. It is found that the ferromagnetic mechanism of the (2Fe-N) co-doped MoS2 system is caused by the bond spin polarization mechanism of the Fe-Mo-Fe coupling chain. Our results verify that the (Fe, N) co-doped single-layer MoS2 has the conditions required to become a dilute magnetic semiconductor.展开更多
In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped ...In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped graphene structures are optimized,and then the forming energy,band structure,density of states,differential charge density are analyzed and calculated.The results show that Band Si-doped systems are p-type doping,while N is n-type doping.By comparing the forming energy,it is found that N atoms are more easily doped in graphene.In addition,for B-,N-,Si-doped systems,it is found that the doping atoms will open the band gap,leading to a great change in the band structure of the doping system.Finally,we systematically study the optical properties of the different configurations.By comparison,it is found that the order of light sensitivity in the visible region is as follows:S-doped>Si-doped>pure>B-doped>N-doped.Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.展开更多
First-principles calculations are performed to investigate the electronic structures and magnetic properties of(Fe,Co)-codoped 4H-SiC using the generalized gradient approximation plus Hubbard U method.We find that 4H-...First-principles calculations are performed to investigate the electronic structures and magnetic properties of(Fe,Co)-codoped 4H-SiC using the generalized gradient approximation plus Hubbard U method.We find that 4H-SiC doped with an isolated Fe atom and an isolated Co atom produces a total magnetic moment of 5.98μB and 6.00μB respectively.We estimate TC of about 263.1 K for the(Fe,Co)-codoped 4H-SiC system.We study ferromagnetic and antiferromagnetic coupling in(Fe,Co)-codoped 4H-SiC.Ferromagnetic behavior is observed.The strong ferromagnetic couplings between local magnetic moments can be attributed to p–d hybridization between Fe,Co and neighboring C.However,the(Fe,Co,V(Si))-codoped 4H-SiC system shows antiferromagnetic coupling when an Si vacancy is introduced in the same 4H-SiC supercell.The results may be helpful for further study on transition metal-codoped systems.展开更多
基金Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.51702089)the National Natural Science Foundation of China(Grant Nos.21603109 and 11804081)+6 种基金the Henan Joint Fund of the National Natural Science Foundation of China(Grant No.U1404216)China Postdoctoral Science Foundation(Grant No.2019M652425)the One Thousand Talent Plan of Shaanxi Province,China,the Natural Science Foundation of Henan Province,China(Grant Nos.182102210305 and 19B430003)the Key Research Project for the Universities of Henan Province,China(Grant No.19A140009)the Doctoral Foundation of Henan Polytechnic University,China(Grant No.B2018-38)the Open Project of Key Laboratory of Radio Frequency and Micro-Nanothe Fund from the Electronics of Jiangsu Province,China(Grant No.LRME201601).
文摘The electronic structures and magnetic properties of diverse transition metal (TM=Fe, Co, and Ni) and nitrogen (N) co-doped monolayer MoS2 are investigated by using density functional theory. The results show that the intrinsic MoS2 does not have magnetism initially, but doped with TM (TM=Fe, Co, and Ni) the MoS2 possesses an obvious magnetism distinctly. The magnetic moment mainly comes from unpaired Mo:4d orbitals and the d orbitals of the dopants, as well as the S:3p states. However, the doping system exhibits certain half-metallic properties, so we select N atoms in the V family as a dopant to adjust its half-metal characteristics. The results show that the (Fe, N) co-doped MoS2 can be a satisfactory material for applications in spintronic devices. On this basis, the most stable geometry of the (2Fe-N) co-doped MoS2 system is determined by considering the different configurations of the positions of the two Fe atoms. It is found that the ferromagnetic mechanism of the (2Fe-N) co-doped MoS2 system is caused by the bond spin polarization mechanism of the Fe-Mo-Fe coupling chain. Our results verify that the (Fe, N) co-doped single-layer MoS2 has the conditions required to become a dilute magnetic semiconductor.
基金supported by the China Postdoctoral Science Foundation(No.2019M651281)。
文摘In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped graphene structures are optimized,and then the forming energy,band structure,density of states,differential charge density are analyzed and calculated.The results show that Band Si-doped systems are p-type doping,while N is n-type doping.By comparing the forming energy,it is found that N atoms are more easily doped in graphene.In addition,for B-,N-,Si-doped systems,it is found that the doping atoms will open the band gap,leading to a great change in the band structure of the doping system.Finally,we systematically study the optical properties of the different configurations.By comparison,it is found that the order of light sensitivity in the visible region is as follows:S-doped>Si-doped>pure>B-doped>N-doped.Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.
基金supported by the Natural Science Foundation of Henan Province(182300410288)the Innovation Scientists and Technicians Troop Construction Projects of Henan Province(CXTD2017089)+5 种基金Science and Technology of Henan Province(182102210305)the Henan Postdoctoral Science Foundation(Lin’s)the Program for Innovative Research Team of Henan Polytechnic University(T2016-2)the Doctoral Foundation of Henan Polytechnic University(B2018-38)the Key Research Project for the Universities of Henan Province(19A140009)the Open Project of Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province(LRME201601)。
文摘First-principles calculations are performed to investigate the electronic structures and magnetic properties of(Fe,Co)-codoped 4H-SiC using the generalized gradient approximation plus Hubbard U method.We find that 4H-SiC doped with an isolated Fe atom and an isolated Co atom produces a total magnetic moment of 5.98μB and 6.00μB respectively.We estimate TC of about 263.1 K for the(Fe,Co)-codoped 4H-SiC system.We study ferromagnetic and antiferromagnetic coupling in(Fe,Co)-codoped 4H-SiC.Ferromagnetic behavior is observed.The strong ferromagnetic couplings between local magnetic moments can be attributed to p–d hybridization between Fe,Co and neighboring C.However,the(Fe,Co,V(Si))-codoped 4H-SiC system shows antiferromagnetic coupling when an Si vacancy is introduced in the same 4H-SiC supercell.The results may be helpful for further study on transition metal-codoped systems.