In recent years,low-dimensional materials especially 2D materials have attracted wide attention due to their novel proprieties.Plenty of devices with excellent performance have been made for different applications bas...In recent years,low-dimensional materials especially 2D materials have attracted wide attention due to their novel proprieties.Plenty of devices with excellent performance have been made for different applications basing on 2D materials.In order to further explore the advantages of 2D materials and integrating them into semiconductor fabrication lines,the 2D material/Si heterostructure-based photodetectors played important roles in many different domains due to their price advantage,mature manufacturing craft and good compatibility to integrated circuits.展开更多
Silicon-based semiconductor technology has made great breakthroughs in the past few decades,but it is reaching the physical limits of Moore’s law.In recent years,the presence of two-dimensional(2 D)materials was rega...Silicon-based semiconductor technology has made great breakthroughs in the past few decades,but it is reaching the physical limits of Moore’s law.In recent years,the presence of two-dimensional(2 D)materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties.In consideration of the widely studied hybrid integration of 2 D material detectors and 3 D siliconbased systems,in this paper,the basic properties of several 2 D materials used in photodetectors are summarized.Subsequently,the progress in silicon photonic integrated photodetectors based on 2 D materials is reviewed,followed by the summarization of the device structure and main performances.Then,the combination of some other traditional and2 D devices is discussed as a supplement.Finally,the prospective development of the hybrid 2 D/3 D silicon-based heterostructures is expected.展开更多
文摘In recent years,low-dimensional materials especially 2D materials have attracted wide attention due to their novel proprieties.Plenty of devices with excellent performance have been made for different applications basing on 2D materials.In order to further explore the advantages of 2D materials and integrating them into semiconductor fabrication lines,the 2D material/Si heterostructure-based photodetectors played important roles in many different domains due to their price advantage,mature manufacturing craft and good compatibility to integrated circuits.
基金financially supported by the National Key Research and Development Program of China(2017YFA0207500)the National Natural Science Foundation of China(62125404)the CASJSPS Cooperative Research Project(GJHZ2021131)。
文摘Silicon-based semiconductor technology has made great breakthroughs in the past few decades,but it is reaching the physical limits of Moore’s law.In recent years,the presence of two-dimensional(2 D)materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties.In consideration of the widely studied hybrid integration of 2 D material detectors and 3 D siliconbased systems,in this paper,the basic properties of several 2 D materials used in photodetectors are summarized.Subsequently,the progress in silicon photonic integrated photodetectors based on 2 D materials is reviewed,followed by the summarization of the device structure and main performances.Then,the combination of some other traditional and2 D devices is discussed as a supplement.Finally,the prospective development of the hybrid 2 D/3 D silicon-based heterostructures is expected.
