Defect construction and heteroatom doping are effective strategies for improving photocatalytic activity of carbon nitride(g-C_(3)N_(4)).In this work,N defects were successfully prepared via cold plasma.High-energy el...Defect construction and heteroatom doping are effective strategies for improving photocatalytic activity of carbon nitride(g-C_(3)N_(4)).In this work,N defects were successfully prepared via cold plasma.High-energy electrons generated by plasma can produce N defects and embed sulfur atoms into g-C_(3)N_(4).The N defects obviously promoted photocatalytic degradation performance that was 7.5 times higher than that of pure g-C_(3)N_(4).The concentration of N defects can be tuned by different power and time of plasma.With the increase in N defects,the photocatalytic activity showed a volcanic trend.The g-C_(3)N_(4)with moderate concentration of N defects exhibited the highest photocatalytic activity.S-doped g-C_(3)N_(4)exhibited 11.25 times higher photocatalytic activity than pure g-C_(3)N_(4).It provided extra active sites for photocatalytic reaction and improved stability of N defects.The N vacancy-enriched and S-doped g-C_(3)N_(4)are beneficial for widening absorption edge and improving the separation efficiency of electron and holes.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.21878214 and 21938009).
文摘Defect construction and heteroatom doping are effective strategies for improving photocatalytic activity of carbon nitride(g-C_(3)N_(4)).In this work,N defects were successfully prepared via cold plasma.High-energy electrons generated by plasma can produce N defects and embed sulfur atoms into g-C_(3)N_(4).The N defects obviously promoted photocatalytic degradation performance that was 7.5 times higher than that of pure g-C_(3)N_(4).The concentration of N defects can be tuned by different power and time of plasma.With the increase in N defects,the photocatalytic activity showed a volcanic trend.The g-C_(3)N_(4)with moderate concentration of N defects exhibited the highest photocatalytic activity.S-doped g-C_(3)N_(4)exhibited 11.25 times higher photocatalytic activity than pure g-C_(3)N_(4).It provided extra active sites for photocatalytic reaction and improved stability of N defects.The N vacancy-enriched and S-doped g-C_(3)N_(4)are beneficial for widening absorption edge and improving the separation efficiency of electron and holes.
