Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their ex...Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their exceptional capabilities across a spectrum of pivotal applications,including high-density data storage,laser displays,laser lighting,and quantum technology[4].展开更多
基金funded by the National Key Research and Development Program(Grant No.2023YFB4604400)the National Natural Science Foundation of China(Grant Nos.62225405,62350002,61991443)+2 种基金the Key R&D Program of Jiangsu ProvinceChina(Grant No.BE2020004)the Collaborative Innovation Centre of Solid-State Lighting and EnergySaving Electronics。
文摘Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their exceptional capabilities across a spectrum of pivotal applications,including high-density data storage,laser displays,laser lighting,and quantum technology[4].
