Memristor based on two-dimensional titania nanosheets for multilevel storage and information processing

A huge amount of data requires the non-volatile memory(NVM)technology to exhibit large-capacity storage and fast calculation speed.To further solve the bottleneck of storage capacity and speed,nano-memristors based on two-dimensional(2D)layered materials are expected to realize NVM.This study proposes the fabrication of an Ag/2D-TiOx/Pt high-performance memristor device based on the 2D titania nanosheet material.The device demonstrates stable electrical characteristics under the direct current(DC)mode,including bipolar resistive switching(RS)behavior,multi-level memristive modes,and retention property.Also,it exhibits low switching voltage(0.42 V/–0.2 V),high R_(OFF)/R_(ON)resistance ratio(105),low switching power(10–9 W/10−5 W),and fast response speed.More importantly,the device realizes information encoding and decoding through a multi-level storage performed by different compliance currents.Multiple devices are connected to the actual circuit to realize a storage function with information processing and programmable characteristics.This work provides a powerful platform for the 2D titania nanosheet application in NVM and information processing.

Artificial nociceptor based on TiO nanosheet memristor

With the development of technology,the learning and memory functions of artificial memristor synapses are necessary for realizing artificial neural networks and neural neuromorphic computing.Owing to their high scalability performance,nanosheet materials have been widely employed in cellular-level learning,but the behaviors of nociceptor based on nanosheet materials have rarely been studied.Here,we present a memristor with an Al/TiO_(2)/Pt structure.After electroforming,the memristor device showed a gradual conductance regulation and could simulate synaptic functions such as the potentiation and depression of synaptic weights.We also designed a new scheme that verifies the pain sensitization,desensitization,allodynia,and hyperalgesia behaviors of real nociceptors in the fabricated memristor.Memristors with these behaviors can significantly improve the quality of intelligent electronic devices.Data fitting showed that the high resistance and low resistance states were consistent with the hopping conduction mechanism.This work promises the application of TiO_(2)-based devices in next-generation neuromorphological systems.