LiNbO3负极薄膜电化学性能及全固态薄膜锂离子电池应用

全固态薄膜锂离子电池具有易微型化与集成化等优点,因此,非常适合为微系统供电。负极对全固态薄膜锂离子电池的性能有重要影响。现有电池通常采用金属锂作为负极,然而其枝晶生长问题及低的热稳定性限制了相应电池在工业、军事等高温、高安全场合应用。为此,本文系统研究了LiNbO_(3)薄膜的电化学性能,结果表明:LiNbO_(3)薄膜呈现高比容量(410.2 mAh·g^(-1))、高倍率(30C时比容量80.9 mAh·g^(-1))和长循环性能(2000圈循环后的容量保持率为100%),以及高的室温离子电导率(4.5×10^(-8)S·cm-1)。在此基础上,基于LiNbO_(3)薄膜构建出全固态薄膜锂离子电池Pt|NCM523|LiPON|LiNbO_(3)|Pt,其展现出较高的面容量(16.3μAh·cm^(-2))、良好的倍率(30μA·cm^(-2)下比容量1.9μAh·cm^(-2))及长循环稳定性(300圈循环后的容量保持率为86.4%)。此外,该电池表现出优秀的高温性能,连续在100℃下工作近200 h的容量保持率高达95.6%。研究表明:LiPON|LiNbO_(3)界面不论在充放电循环还是高温下均非常稳定,这有助与提升全电池综合性能。

Laser machining fundamentals:micro,nano,atomic and close-to-atomic scales

With the rapid development in advanced industries,such as microelectronics and optics sectors,the functional feature size of devises/components has been decreasing from micro to nanometric,and even ACS for higher performance,smaller volume and lower energy consumption.By this time,a great many quantum structures are proposed,with not only an extreme scale of several or even single atom,but also a nearly ideal lattice structure with no material defect.It is almost no doubt that such structures play critical role in the next generation products,which shows an urgent demand for the ACSM.Laser machining is one of the most important approaches widely used in engineering and scientific research.It is high-efficient and applicable for most kinds of materials.Moreover,the processing scale covers a huge range from millimeters to nanometers,and has already touched the atomic level.Laser–material interaction mechanism,as the foundation of laser machining,determines the machining accuracy and surface quality.It becomes much more sophisticated and dominant with a decrease in processing scale,which is systematically reviewed in this article.In general,the mechanisms of laser-induced material removal are classified into ablation,CE and atomic desorption,with a decrease in the scale from above microns to angstroms.The effects of processing parameters on both fundamental material response and machined surface quality are discussed,as well as theoretical methods to simulate and understand the underlying mechanisms.Examples at nanometric to atomic scale are provided,which demonstrate the capability of laser machining in achieving the ultimate precision and becoming a promising approach to ACSM.

锂负极失效的全固态薄膜锂电池的直接回收再利用

作为微电子器件的理想电源,全固态薄膜锂电池(TFB)已经被广泛地研究了几十年,并开始进入商业化应用。然而,目前关于失效TFB的回收与再利用的研究几乎没有,这将会阻碍TFB的可持续发展。本工作针对因金属锂负极失效而造成电池失效的TFB,提出了一种简单的基于最常见LiCoO_(2)(LCO)/LiPON/LiTFB(F-TFB)的直接回收再利用的方法。研究发现,F-TFB中的金属锂负极薄膜在循环过程会被部分氧化从而造成电池失效。我们提出利用无水乙醇溶液有效地溶解并去除F-TFB上失效的金属锂负极部分,从而快速地回收底层的LCO/LiPON薄膜。结构分析和表面分析结果表明,回收的LCO/LiPON薄膜中的LCO正极的晶体结构、LCO/LiPON的界面结构以及LiPON电解质的表面保持完好,使其再利用成为了可能。进一步地,我们在回收的LCO/LiPON薄膜上依次沉积了LiPON和Li薄膜,构建得到了电化学性能恢复的LCO/LiPON/LiTFB,并获得了与新制备的TFB相一致的比容量(0.223 m Ah·cm^(-2))、良好的倍率性能和循环寿命(500次循环后容量保持率为77.3%)。这种简单而有效的回收再利用方法有望延长固态电池的使用寿命,减少能源和资源消耗,促进固态电池的可持续发展。

制造发展的三个范式:制造发展规律的研究

基于对人类社会发展历史和科学技术发展内在规律的认识,本文详细分析了制造发展的三个范式,论证了原子及近原子尺度制造是制造范式III的核心使能技术。文章回顾了国内外各机构对原子级制造研发规划现状,指出我国目前处于原子级制造技术发展的重要战略机遇期,并从设计、材料、加工和检测等角度分析了原子级制造的技术体系内涵;梳理了原子级表面制造、原子级结构制造、原子级测量与表征等领域的研究进展,呈现了当前具有原子级制造能力的部分代表性技术,包括原子级切削、原子级抛光、电化学加工、等离子体原子级加工技术、原子精准操控以及原子分辨测量与表征技术,并对原子级制造战略规划提出发展建议。

原子精度制造新原理和新方法

目前航空航天、核物理、微电子、光电子和半导体等国家战略领域高性能装备的性能需求日渐严苛,核心零部件的制造精度必须迈进原子级水平,亟需研究原子精度的高性能制造新原理和新方法。本文归纳并提出了目前迫切需求的原子级表面精度、原子级结构精度、原子级损伤控制以及原子级特征尺寸结构创成四大原子精度制造核心能力,从能场辅助原子级切削、多能场辅助原子有序排布、表面能弱化原子精度材料去除以及超光学衍射极限的原子精度制造四大方向进行系统梳理,介绍了面向不同应用场景的原子精度制造新原理和新方法的研究现状,并概述了各类方法的优势和缺点,从中提炼出多能场耦合条件下的能量和原子间相互作用机理这一关键科学问题,并从四大方向上对未来我国原子级制造的基础研究提出了建议。

Optimization of cold-end system of thermal power plants based on entropy generation minimization

Cold-end systems are heat sinks of thermal power cycles,which have an essential effect on the overall performance of thermal power plants.To enhance the efficiency of thermal power plants,multi-pressure condensers have been applied in some large-capacity thermal power plants.However,little attention has been paid to the optimization of the cold-end system with multi-pressure condensers which have multiple parameters to be identified.Therefore,the design optimization methods of coldend systems with single-and multi-pressure condensers are developed based on the entropy generation rate,and the genetic algorithm(GA)is used to optimize multiple parameters.Multiple parameters,including heat transfer area of multi-pressure condensers,steam distribution in condensers,and cooling water mass flow rate,are optimized while considering detailed entropy generation rate of the cold-end systems.The results show that the entropy generation rate of the multi-pressure cold-end system is less than that of the single-pressure cold-end system when the total condenser area is constant.Moreover,the economic performance can be improved with the adoption of the multi-pressure cold-end system.When compared with the single-pressure cold-end system,the excess revenues gained by using dual-and quadruplepressure cold-end systems are 575 and 580 k$/a,respectively.

Cutting of Graphite at Atomic and Close-to-Atomic Scale Using Flexible Enhanced Molecular Dynamics

Atomic and close-to-atomic scale manufacturing is the key technology for the production of next-generation devices with atomic precision.As an important approach of mechanical processing,cutting has evolved as a potential candidate to generate an atomically smooth surface;thus,exploring its ultimate capability is significant.In this paper,single-crystal graphite,whose lattice structure and chemical bond property are of representation for demonstration,is selected to study the mechanism of atomic layer removal using molecular dynamics.A localized workpiece,which is dynamically updated on the basis of the tool position,is used to improve the computation efficiency.The principle and bullet points of this modeling method are first introduced,followed by a series of simulations under various undeformed chip thicknesses and tool edge radi.In addition,different potentials for the tool-workpiece interaction are tested,and the effect on the material response is presented.Based on the analysis of deformation,the number of carbon layers removed,and cutting forces,the chip formation mechanism and further understanding of the controllability of cutting at atomic and close-to-atomic scale can be achieved.

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

This paper presents a new approach for material removal on silicon at atomic and close-to-atomic scale assisted by photons.The corresponding mechanisms are also investigated.The proposed approach consists of two sequential steps:surface modification and photon irradiation.The back bonds of silicon atoms are first weakened by the chemisorption of chlorine and then broken by photon energy,leading to the desorption of chlorinated silicon.The mechanisms of photon-induced desorption of chlorinated silicon,i.e.,SiCl_(2) and SiCl,are explained by two models:the Menzel-Gomer-Redhead(MGR)and Antoniewicz models.The desorption probability associated with the two models is numerically calculated by solving the Liouville-von Neumann equations for open quantum systems.The calculation accuracy is verified by comparison with the results in literatures in the case of the NO/Pt(111)system.The calculation method is then applied to the cases of SiCl_(2)/Si and SiCl/Si systems.The results show that the value of desorption probability first increases dramatically and then saturates to a stable value within hundreds of femtoseconds after excitation.The desorption probability shows a super-linear dependence on the lifetime of excited states.