Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.

Precise phase adjustment and antibacterial property of copper sulfide particles in confined mesoporous silica nanoreactor

Bacteria-caused wound infection greatly threatens human health,thus developing an efficient and safe antibacterial agent without drug resistance is still a great challenge.Herein,a confined vulcanization strategy is proposed to construct copper sulfides-loaded dual-mesoporous silica nanospheres(Cux-Sy@DMSNs)with various crystal phases for reactive oxygen species(ROS)-mediated and photothermal antibacterial application.With the pore confinement of DMSNs,the crystal phases of copper sulfides including CuS,Cu_(9)S_(5)and Cui.96S can be easily controlled by changing the vulcanization temperature.The relationships between the crystal phases and photothermal properties as well as peroxidase-like activity of copper sulfides were systematically investigated.Results show that the obtained CuS@DMSNs exhibited higher photothermal ability with remarkable photothermal conversion efficiency of 36.86%in the second near-infrared region(NIR-II)and better peroxidase-like activity,compared to those of Cu_(9)S_(5)@DMSNs and Cu_(1.96)S@DMSNs.As a result,the in vitro experiments showed the good antibacterial effect against both gram-negative E.coli and gram-positive S.aureus under 1064 nm laser irradiation and the presence of H_(2)O_(2).Besides,the CCK-8 assay indicated that CuS@p-DMSNs have minimal cytotoxicity against normal human umbilical vein endothelial cells at the ranged concentrations.Therefore,the resultant CuS@p-DMSNs could act as a promising antibacterial agent for deep wound bacterial infection treatment.

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

An amorphous Ge（a-Ge） intermediate layer is introduced into the Si bonded interface to lower the annealing temperature and achieve good electrical characteristics. The interface and electrical characteristics of nSi/n-Si and p-Si/n-Si junctions manufactured by low-temperature wafer bonding based on a thin amorphous Ge are investigated. It is found that the bubble density tremendously decreases when the a-Ge film is not immersed in DI water. This is due to the decrease of the –OH groups. In addition, when the samples are annealed at 400 °C for20 h, the bubbles totally disappear. This can be explained by the appearance of the polycrystalline Ge（absorption of H;） at the bonded interface. The junction resistance of the n-Si/n-Si bonded wafers decreases with the increase of the annealing temperature. This is consistent with the recrystallization of the a-Ge when high-temperature annealing is conducted. The carrier transport of the Si-based PN junction annealed at 350 °C is consistent with the trap-assisted tunneling model and that annealed at 400 °C is related to the carrier recombination model.