1 Introduction In CRYPTO 2019,Gohr[1]innovatively integrated deep learning with differential cryptanalysis,specifically applied to SPECK32/64,resulting in the development of a neural distinguisher(ND)that outperforms ...1 Introduction In CRYPTO 2019,Gohr[1]innovatively integrated deep learning with differential cryptanalysis,specifically applied to SPECK32/64,resulting in the development of a neural distinguisher(ND)that outperforms the DDT-based distinguisher(DD).Subsequently,a hybrid distinguisher(HD)was introduced,combining the strengths of ND and a classical differential(CD)and the practical realization of 11-and 12-round key recovery attacks is launched.In 2022,Lyu et al.[2]further enhanced Gohr's framework,applying it to SIMECK32/64.To more deeply evaluate the security of SIMECK32/64,we made some improvements for differentialneural cryptanalysis,as listed below.展开更多
Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving f...Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving force to solve the issue.Herein,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A cm.The energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level unpinning.Carrier transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been extracted.Comprehensive analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62172319,62172427)the Fundamental Research Funds for the Central Universities(No.QTZX23090)the Postgraduate Scientific Research Innovation Project of Hunan Province(No.CX20220016).
文摘1 Introduction In CRYPTO 2019,Gohr[1]innovatively integrated deep learning with differential cryptanalysis,specifically applied to SPECK32/64,resulting in the development of a neural distinguisher(ND)that outperforms the DDT-based distinguisher(DD).Subsequently,a hybrid distinguisher(HD)was introduced,combining the strengths of ND and a classical differential(CD)and the practical realization of 11-and 12-round key recovery attacks is launched.In 2022,Lyu et al.[2]further enhanced Gohr's framework,applying it to SIMECK32/64.To more deeply evaluate the security of SIMECK32/64,we made some improvements for differentialneural cryptanalysis,as listed below.
基金financial support from the National Funds for Distinguished Young Scientists (61825503)the National Natural Science Foundation of China (62075101, 21701087 and 61775101)+1 种基金the National Program for Support of Top-Notch Young Professionalsthe Postgraduate Research & Practice Innovation Program of Jiangsu Province (46030CX18010)
基金the National Natural Science Foundation of China(No.11774001)the Anhui Project(No.Z010118169)。
文摘Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving force to solve the issue.Herein,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A cm.The energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level unpinning.Carrier transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been extracted.Comprehensive analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.
