Silicon based optical modulators with improved extinction ratio （ER） of 25 dB were demon- strated on complementary metal oxide semiconductor （CMOS） platform. It was proposed that the effect of optical absorption d...Silicon based optical modulators with improved extinction ratio （ER） of 25 dB were demon- strated on complementary metal oxide semiconductor （CMOS） platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.展开更多
基金Acknowledgements This work was supported in part by the National Program on Key Basic Research Project of the Ministry of Science and Technology of China （Nos. 2006CB302803 and 2011CB301701） and the National Natural Science Foundation of China （Grant No. 60877036）.
文摘Silicon based optical modulators with improved extinction ratio （ER） of 25 dB were demon- strated on complementary metal oxide semiconductor （CMOS） platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.
